Preliminary Technical Information IXTK60N50L2 IXTX60N50L2 LinearL2TM Power MOSFET w/Extended FBSOA VDSS ID25 = 500V = 60A Ω < 100mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IA EAS PD 60 A 150 A TC = 25°C TC = 25°C 60 3 A J TC = 25°C 960 W -55...+150 °C TJ TJM 150 °C Tstg -55...+150 °C TL 1.6mm (0.063 in.) from case for 10s 300 °C TSOLD Plastic body for 10s 260 °C Md FC Mounting torque (IXTK) Mounting Force (IXTX) 1.13/10 20..120 / 4.5..27 Nm/lb.in. N/lb. Weight TO-264 PLUS247 10 6 g g G D (TAB) S PLUS247 G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z z z z Designed for linear operation International standard packages Avalanche rated Guaranteed FBSOA at 75°C Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25 , Note 1 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved V 4.5 V ±200 nA 50 μA 5 mA 100 • Easy to mount • Space savings • High power density Applications z z z z z Solid state circuit breakers Soft start controls Linear amplifiers Programmable loads Current regulators mΩ DS100087(12/08) IXTK60N50L2 IXTX60N50L2 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 18 VDS= 10V, ID = 0.5 • ID25, Note 1 25 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf RG = 0.5Ω (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd S 24 nF 1325 pF 172 pF 40 ns Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 32 40 ns 165 ns 38 ns 610 nC 130 nC 365 nC RthJC TO-264 (IXTK) Outline 0.13 °C/W RthCS 0.15 °C/W Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 400V, ID = 1.1A, TC = 75°C, tp = 3s 440 W PLUS 247TM (IXTX) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 60 A Repetitive, pulse width limited by TJM 240 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IRM QRM IF = 60A, -di/dt = 100A/μs, VR = 100V, VGS = 0V 980 73 35.8 ns A μC Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTK60N50L2 IXTX60N50L2 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 60 160 VGS = 20V 14V 12V 10V 55 50 9V 120 40 ID - Amperes ID - Amperes 45 VGS = 20V 14V 12V 140 8V 35 30 25 7V 20 10V 100 9V 80 60 8V 15 40 10 6V 5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 7V 20 5 6V 0 4.5 5.0 0 5 10 25 30 Fig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 60 2.8 VGS = 20V 12V 10V 9V 50 45 2.6 VGS = 10V 2.4 RDS(on) - Normalized 55 ID - Amperes 20 VDS - Volts VDS - Volts 8V 40 35 30 7V 25 20 15 2.2 2.0 I D = 60A 1.8 I D = 30A 1.6 1.4 1.2 1.0 6V 10 0.8 5V 5 0.6 0 0.4 0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 30A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 65 2.8 VGS = 10V 2.6 20V 60 ---- 55 TJ = 125ºC 2.4 50 2.2 45 ID - Amperes RDS(on) - Normalized 15 2.0 1.8 1.6 TJ = 25ºC 1.4 40 35 30 25 20 15 1.2 10 1.0 5 0.8 0 0 20 40 60 80 100 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 120 140 160 -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade IXYS REF: T_60N50L2(9R)12-08-08-B IXTK60N50L2 IXTX60N50L2 Fig. 7. Input Admittance Fig. 8. Transconductance 100 55 90 50 45 80 60 g f s - Siemens ID - Amperes TJ = - 40ºC 25ºC 125ºC 40 70 TJ = 125ºC 25ºC - 40ºC 50 40 30 35 30 25 20 15 20 10 10 5 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 9.5 10 20 30 40 VGS - Volts 50 60 70 80 90 100 110 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 200 16 180 14 VDS = 250V I D = 30A 160 I G = 10mA 12 VGS - Volts IS - Amperes 140 120 100 80 10 8 6 TJ = 125ºC 60 4 TJ = 25ºC 40 2 20 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 100 200 VSD - Volts 300 400 500 600 700 800 900 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 Ciss 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 1,000 0.100 0.010 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTK60N50L2 IXTX60N50L2 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 75ºC 1,000.0 1,000.0 RDS(on) Limit RDS(on) Limit 100.0 100.0 25µs 100µs ID - Amperes ID - Amperes 25µs 1ms 10.0 10ms 100µs 10.0 1ms 10ms 100ms DC 1.0 100ms 1.0 TJ = 150ºC DC TJ = 150ºC TC = 25ºC Single Pulse TC = 75ºC Single Pulse 0.1 0.1 10 100 VDS - Volts © 2008 IXYS CORPORATION, All rights reserved 1000 10 100 1000 VDS - Volts IXYS REF: T_60N50L2(9R)12-08-08-B