Linear L2TM Power MOSFET with extended FBSOA VDSS ID25 IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 D N-Channel Enhancement Mode O = 500V = 30A ≤ 200mΩ Ω RDS(on) D D TO-247 (IXTH) RGi G O ww O (TAB) S Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 30 A IDM TC = 25°C, pulse width limited by TJM 60 A IAR TC = 25°C 30 A EAR TC = 25°C 50 mJ 1.5 J 400 W -55 to +150 °C TJM +150 °C Tstg -55 to +150 °C EAS PD TC = 25°C TJ TL 1.6mm (0.063in) from case for 10s 300 °C TSOLD Plastic body for 10s 260 °C Md Mounting torque (TO-247, TO-3P) 1.13/10 Nm/lb.in. Weight TO-247 TO-3P TO-268 6.0 5.5 5.0 g g g TO-3P (IXTQ) G G (TJ = 25°C, unless otherwise specified) Min. BVDSS VGS = 0V, ID = 250μA 500 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) TJ = 125°C VGS = 10V, ID = 0.5 • ID25 , Note 1 Typ. z Max. z V 4.5 V ±100 nA 50 μA 300 μA 200 mΩ z Designed for linear operation International standard packages Unclamped Inductive Switching (UIS) rated. Molding epoxies meet UL 94 V-0 flammability classification Integrated gate resistor for easy paralleling Guaranteed FBSOA at 75°C Applications z z z z z © 2008 IXYS CORPORATION, All rights reserved (TAB) Features z Characteristic Values S G = Gate D = Drain S = Source TAB = Drain z Test Conditions (TAB) S TO-268 (IXTT) z Symbol D Solid state circuit breakers Soft start controls Linear amplifiers Programmable loads Current regulators DS99957A (04/08) IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 Min. Typ. 9 12 Coss td(on) tr td(off) tf VGS = 0V, VDS = 25V, f = 1MHz Integrated gate input resistor Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 0Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd S pF 530 pF 115 pF 3.5 Ω 35 ns 117 ns 40 ns Dim. 240 nC 58 nC 135 nC °C/W Safe Operating Area Specification Test Conditions Min. SOA VDS = 400V, ID = 0.5A, TC = 75°C, tp = 2s 200 Source-Drain Diode Symbol Test Conditions IS VGS = 0V ISM e ns 0.25 Symbol ∅P 3 94 0.31 °C/W (TO-247, TO-3P) 2 Terminals: 1 - Gate 3 - Source RthJC RthCS 15 1 Crss RGi Max. 8100 Ciss TO-247 (IXTH) Outline Typ. Max. W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 30 A Repetitive, pulse width limited by TJM 120 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = IS, -di/dt = 100A/μs, VR = 100V 500 Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-3P (IXTQ) Outline ns Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. TO-268 (IXTT) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ T J = 25ºC @ T J = 25ºC 30 80 VGS = 20V 12V 10V 9V 27 24 VGS = 20V 14V 12V 70 60 18 ID - Amperes ID - Amperes 21 8V 15 12 7V 10V 50 40 9V 30 8V 9 20 6 7V 6V 10 3 6V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0 3 6 9 VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC 18 21 24 27 30 2.8 VGS = 20V 12V 10V 9V 24 2.6 VGS = 10V 2.4 21 RDS(on) - Normalized 27 ID - Amperes 15 Fig. 4. RDS(on) Normalized to ID = 15A Value vs. Junction Temperature 30 8V 18 15 7V 12 9 6V 2.2 2.0 I D = 30A 1.8 1.6 I D = 15A 1.4 1.2 1.0 6 0.8 5V 3 0.6 0 0.4 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.8 35 2.6 VGS = 10V 30 2.4 TJ = 125ºC 25 2.2 ID - Amperes RDS(on) - Normalized 12 VDS - Volts 2.0 1.8 1.6 1.4 20 15 10 TJ = 25ºC 1.2 5 1.0 0.8 0 0 10 20 30 40 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 50 60 70 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 Fig. 7. Input Admittance 50 30 45 27 40 24 35 TJ = 125ºC 25ºC - 40ºC 30 g f s - Siemens ID - Amperes Fig. 8. Transconductance 25 20 TJ = - 40ºC 21 25ºC 18 125ºC 15 12 15 9 10 6 5 3 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 9.5 5 10 15 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 25 30 35 40 45 50 Fig. 10. Gate Charge 90 16 80 14 70 12 VDS = 250V 60 VGS - Volts IS - Amperes 20 ID - Amperes 50 40 I G = 10mA 10 8 6 TJ = 125ºC 30 I D = 15A 4 TJ = 25ºC 20 2 10 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 50 VSD - Volts 100 150 200 250 300 350 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.00 Ciss 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 1,000 0.10 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 75ºC 100.0 100.0 RDS(on) Limit RDS(on) Limit 25µs 100µs 25µs 10.0 100µs ID - Amperes ID - Amperes 10.0 1ms 10ms 1.0 1ms 10ms 1.0 DC 100ms DC TJ = 150ºC Single Pulse 100ms TJ = 150ºC Single Pulse 0.1 0.1 10 100 VDS - Volts © 2008 IXYS CORPORATION, All rights reserved 1000 10 100 1000 VDS - Volts IXYS REF: T_30N50L2(7R)4-23-08-A