OPTODIODE OD880F

HIGH-POWER GaAlAs IR EMITTERS
GLASS
DOME
.183
.186
FEATURES
• High reliability liquid-phase epitaxially grown GaAlAs
• 880nm peak emission for optimum matching with
ODD-45W photodiode
• Wide range of linear power output
• Hermetically sealed TO-46 package
• Narrow angle for long distance applications
ANODE
(CASE)
.209
.220
.015
.152
.154
.100
.041
20
.017
.030
.040
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
13
1.00
MIN.
OD-880F
.036
CATHODE
45°
.197
.205
PARAMETERS
MB
E
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
TEST CONDITIONS
Total Power Output, Po
IF = 100mA
Peak Emission Wavelength, λP
TYP
15
17
mW
120
135
mW/sr
880
nm
IF = 50mA
DE
Spectral Bandwidth at 50%, Δλ
Half Intensity Beam Angle, θ
MIN
CE
Radiant Intensity, Ie
R
RoHS
IF = 100mA
Forward Voltage, VF
Reverse Breakdown Voltage, VR
IR = 10μA
FE
Rise Time
LI
Fall Time
nm
8
Deg
30
VR = 0V
Capacitance, C
UNITS
80
1.55
5
MAX
1.9
Volts
Volts
17
pF
0.5
µsec
0.5
µsec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
190mW
Continuous Forward Current
OF
100mA
Peak Forward Current (10μs, 400Hz)2
3A
Reverse Voltage
5V
Lead Soldering Temperature (1/16" from case for 10sec)
260°C
EN
D
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-55°C to 100°C
Maximum Junction Temperature
100°C
Thermal Resistance, RTHJA1
350°C/W Typical
Thermal Resistance, RTHJA2
115°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected]iode.com, Website: www.optodiode.com
Revision February 26, 2013
HIGH-POWER GaAlAs IR EMITTERS
THERMAL DERATING CURVE
10
PEAK FORWARD CURRENT, Ip (amps)
POWER DISSIPATION (mW)
INFINITE
HEAT SINK
160
140
NO
HEAT SINK
120
100
80
60
40
20
50
75
AMBIENT TEMPERATURE (°C)
t = 500μs
100
Ip
T
IF = 50mA
80
70
TCASE = 25°C
NO PRE BURN-IN PERFORMED
RELATIVE POWER OUTPUT
FE
2
1
100
40
20
0
–25 –20
105
DE
104
LI
FORWARD CURRENT, IF (amps)
3
10
60
FORWARD I-V CHARACTERISTICS
4
1
DUTY CYCLE, D (%)
80
CE
IF = 100mA
50
103
STRESS TIME, (hrs)
t
T
RADIATION PATTERN
90
102
0.1
100
IF = 20mA
101
D=
t
0.1
DEGRADATION CURVE
60
t = 100μs
1
MB
ER
100
25
t = 10μs
0.01
0.01
RELATIVE POWER OUTPUT (%)
0
RELATIVE POWER OUTPUT (%)
TYPICAL CHARACTERISTICS
MAXIMUM RATINGS
180
MAXIMUM PEAK PULSE CURRENT
20
13
200
OD-880F
–15
–10
–5
0
5
10
BEAM ANGLE, θ(deg)
15
20
25
POWER OUTPUT vs TEMPERATURE
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
OF
0.6
0.5
–50
0
0
1
2
3
4
FORWARD VOLTAGE, VF (volts)
5
6
SPECTRAL OUTPUT
75
100
POWER OUTPUT vs FORWARD CURRENT
D
80
POWER OUTPUT, Po (mW)
RELATIVE POWER OUTPUT (%)
0
25
50
AMBIENT TEMPERATURE (°C)
1,000
100
EN
–25
60
40
100
10
20
0
750
800
850
900
WAVELENGTH, λ(nm)
950
1,000
1
10
DC
PULSE
10μs, 100Hz
100
1,000
FORWARD CURRENT, IF (mA)
10,000
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision February 26, 2013