HIGH-POWER GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880L ANODE (CASE) .015 • High reliability liquid-phase epitaxially grown GaAlAs .209 .220 • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output .183 .152 .186 .156 • Hermetically sealed TO-46 package .100 .041 .017 .024 .043 .143 .150 CATHODE • Medium emission angle for best coverage/power density All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. .036 45° ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, λP Spectral Bandwidth at 50%, ∆λ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, VR TEST CONDITIONS IF = 100mA MIN TYP 18 20 mW 50 mW/sr 880 nm 80 nm IF = 50mA 35 IF = 100mA IR = 10µA MAX 1.55 Deg 1.9 Volts 30 Volts 17 pF Rise Time 0.5 µsec Fall Time 0.5 µsec Capacitance, C VR = 0V 5 UNITS ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Power Dissipation1 190mW Continuous Forward Current 100mA Peak Forward Current (10µs, 400Hz)2 3A Reverse Voltage 5V Lead Soldering Temperature (1/16" from case for 10sec) 240°C 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C THERMAL PARAMETERS Storage and Operating Temperature Range -55°C TO 100°C Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 100°C 400°C/W Typical 135°C/W Typical 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C OPTO DIODE CORP. 4 750 Mitchell Road, Newbury Park, California 91320 Phone (805) 499-0335 FAX (805) 499-8108 HIGH-POWER GaAlAs IR EMITTERS 200 OD-880L THERMAL DERATING CURVE 10 PEAK FORWARD CURRENT, Ip (amps) POWER DISSIPATION (mW) MAXIMUM RATINGS 180 INFINITE HEAT SINK 160 140 NO HEAT SINK 120 100 80 60 40 20 50 75 AMBIENT TEMPERATURE (°C) t = 10µs 100 t = 500µs Ip T RELATIVE POWER OUTPUT (%) RELATIVE POWER OUTPUT (%) 70 TCASE = 25° C NO PRE BURN-IN PERFORMED IF = 100mA 1 DUTY CYCLE, D (%) 10 100 104 80 60 40 20 0 –50 50 105 FORWARD I-V CHARACTERISTICS –40 –30 –20 –10 0 10 20 BEAM ANGLE, θ(deg) 30 40 50 POWER OUTPUT vs TEMPERATURE 1.5 4 RELATIVE POWER OUTPUT FORWARD CURRENT, IF (amps) 1.4 3 2 1 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 –50 0 0 1 2 3 4 FORWARD VOLTAGE, VF (volts) 5 6 SPECTRAL OUTPUT –25 0 25 50 AMBIENT TEMPERATURE (°C) 75 100 POWER OUTPUT vs FORWARD CURRENT 1,000 100 80 POWER OUTPUT, Po (mW) RELATIVE POWER OUTPUT (%) TYPICAL CHARACTERISTICS IF = 50mA 80 103 STRESS TIME, (hrs) 0.1 RADIATION PATTERN 90 102 t T 100 IF = 20mA 101 D= t 0.1 DEGRADATION CURVE 100 60 t = 100µs 1 0.01 0.01 0 25 MAXIMUM PEAK PULSE CURRENT 60 40 100 10 DC PULSE 10µs, 100Hz 20 0 750 800 850 900 WAVELENGTH, λ(nm) 950 1,000 1 10 100 1,000 FORWARD CURRENT, IF (mA) 10,000 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335 Fax: (805) 499-8108 Email: [email protected] Web Site: www.optodiode.com 5