VDRM HTx2-600 HTx2-600 Symbol 2.T2 = 600 V 3.Gate IT(RMS) = 2.0A 1.T1 1.T1 2. T2 3. Gate FEATURES Repetitive Peak Off-State Voltage: 600V R.M.S On-state Current (IT(RMS)=2A) High Commutation dv/dt HTC2-600 HTM2-600 General Description The Triac HTx2-600 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. Absolute Maximum Ratings (Ta=25℃) Symbol Parameter Value Units VDRM Repetitive Peak Off-State Voltage 600 V IT(RMS) R.M.S On-State Current (Ta = 66℃) 1.5 A ITSM Surge On-State Current (One Cycle, 50/60Hz, Peak, Non Repetitive) 13/15 A VGM Peak Gate Voltage 6 V IGM Peak Gate Current 0.5 A PGM Peak Gate Power Dissipation 1 W TSTG Storage Temperature Range -40 to +125 ℃ Tj Operating Temperature Range -40 to +125 ℃ ◎ SEMIHOW REV.1.0 Jan 2006 Symbol Parameter (Ta=25℃) Test Conditions Min Typ Max Units IGT Gate Trigger Current VD=6V, RL=10Ω 1+, 1-, 3- 20 mA VGT Gate Trigger Voltage VD=6V, RL=10Ω 1+, 1-, 3- 1.5 V VGD Non Trigger Gate Voltage Tj=125℃, VD=1/2VDRM (dv/dt)c IH Critical Rate of Rise of Tj=125℃, VD=2/3VDRM Off-State Voltage at (di/dt)c=-0.75A/ms Communication 0.2 V 5 V/uS Holding Current 5 VD=VDRM, Single Phase, Half Wave, IDRM Repetitive Peak OffState Current VTM Peak On-State Voltage IT=6A, Inst, Measurement Tj =125℃ mA 0.5 mA 1.6 V Max Units 6.25 ℃/W Thermal Characteristics Symbol Parameter RTH(J-C) Thermal Resistance Test Conditions Junction to Case Min Typ ◎ SEMIHOW REV.1.0 Jan 2006 HTx2-600 Electrical Characteristics HTx2-600 Performance Curves Fig 1. Gate Characteristics Fig 2.On-State Voltage 101 1 On-state Current (A) Gate Voltage (V) 10 100 100 10-1 101 102 0.5 103 1.0 1.5 Gate Current (mA) 103 3.0 3.5 4.0 4.5 5.0 1.5 Power Dissipation (W) VGT(t℃) X 100 (%) VGT(25℃) 2.5 Fig 4. On State Current vs. Maximum Power Dissipation Fig 3. Gate Trigger Voltage vs. Junction Temperature V+GT1 V-GT1 V+GT3 V-GT3 102 1.2 0.9 0.6 0.3 0 101 -50 0 50 100 0 150 0.2 0.4 0.6 0.8 1.0 1.2 RMS On-State Current (A) Junction Temperature (℃) Fig 6. Surge On-State Current Rating (Non-Repetitive) Fig 5. On State Current vs. Allowable Case Temperature 130 12 120 Surge On-State Current (A) Allowable Case Temp (℃) 2.0 On-state Voltage (V) 110 100 90 80 70 60 50 40 0 0.2 0.4 0.6 0.8 RMS On-State Current (A) 1.0 1.2 10 8 6 4 2 0 100 101 102 Time (Cycles) ◎ SEMIHOW REV.1.0 Jan 2006 10 Transient Thermal Impedance (℃/W) 103 VGT(t℃) X 100 (%) VGT(25℃) HTx2-600 Fig8. Transient Thermal Impedance Fig 7. Gate Trigger Current vs. Junction Temperature 102 1 101 -50 0 50 100 150 10-2 10-1 Junction Temperature (℃) 101 100 102 Time (Sec) Fig 7. Gate Trigger Characteristics Test Circuit 10Ω 10Ω A RG A 6V RG 6V V V Test Procedure I Test Procedure II 10Ω A RG 6V V Test Procedure III ◎ SEMIHOW REV.1.0 Jan 2006 HTx2-600 Package Dimension HTC2-600 (TO-126) DIM Millimeters A 8.5max B 12.0max C 13.0min D 3.8±0.2 G 0.78±0.08 G1 1.2 H 2.8max H3 1.27 K 2.5±0.2 L 2.3max φ 3.20±0.2 Dimensions in Millimeters ◎ SEMIHOW REV.1.0 Jan 2006 HTx2-600 Package Dimension HTM2-600 (TO-126ML) corresponding symbol measurement A(mm) 7.99±0.25 B(mm) 11.12±0.25 C(mm) 14.5±0.5 E(mm) 3.625±0.125 F(mm) 1.4±0.12 G(mm) 0.76±0.08 G1(mm) 1.3±0.12 H(mm) 3.57±0.13 H3(mm) 2.01±0.13 I(mm) 2.99±0.38 K(mm) 1.0±0.12 L(mm) 2.3MAX φ1(mm) 3.0±0.12 ◎ SEMIHOW REV.1.0 Jan 2006