TYSEMI 2SB1026

Product specification
2SB1026
Features
Low frequency power amplifier
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
-120
V
Collector to emitter voltage
VCEO
-100
V
Emitter to base voltage
VEBO
-5
V
IC
-1
A
iC(peak)*1
-2
A
PC*2
1
W
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
*1 PW
10 ms, Duty cycle
20%
*2 Value on the alumina ceramic board (12.5X 20X 0.7 mm)
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector to base breakdown voltage
V(BR)CBO
IC = -10 ìA, IE = 0
-120
V
Collector to emitter breakdown voltage
V(BR)CEO
IC = -1 mA, RBE =
-100
V
Emitter to base breakdown voltage
V(BR)EBO
IE = -10 ìA, IC = 0
-5
Collector cutoff current
ICBO
DC current transfer ratio
hFE
Collector to emitter saturation voltage
V
VCB = -100 V, IE = 0
-10
VCE = -5 V, IC = -150mA,
60
VCE = -5 V, IC = -500mA
30
ìA
200
VCE(sat)
IC = -0.5 A, IB = -50 mA,
-1.0
V
Base to emitter voltage
VBE
VCE = -5 V, IC = -150mA,
-0.9
V
Gain bandwidth product
fT
VCE = -5 V, IC = -150 mA
140
MHz
VCB = -10 V, IE = 0,f = 1 MHz
20
pF
Collector output capacitance
Cob
hFE Classification
Marking
DL
DM
hFE
60 to 120
100 to 200
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 1