TYSEMI 2SD1101

Transistors
IC
SMD Type
Product specification
2SD1101
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
0.55
Low Frequency amplifier.
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
25
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
5
V
Collector current
Collector peak current
IC
0.7
A
iC(peak)
1
A
PC
150
mW
Collector dissipation
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
25
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
20
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
5
Collector cutoff current
ICBO
VCB = 20V, IE=0
DC current gain
hFE
VCE = 1V , IC = 0.15A
85
VCE(sat) IC = 0.5A , IB = 0.05A
Collector-emitter saturation voltage
Base-emitter voltage
VBE
V
1.0
VCE = 1V , IC = 0.15A
ìA
240
0.5
V
1.0
V
hFE Classification
Marking
AB
AC
hFE
85 170
120 240
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 1