KEXIN 2SB1027

Transistors
SMD Type
Silicon PNP Epitaxial
2SB1027
Features
Low frequency amplifier
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
-180
V
Collector to emitter voltage
VCEO
-160
V
Emitter to base voltage
VEBO
-5
V
IC
-1.5
A
iC(peak)*1
-3
A
PC*2
1
W
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
*1 PW
10 ms, Duty cycle
20%
*2 Value on the alumina ceramic board (12.5X 20X 0.7 mm)
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector to base breakdown voltage
V(BR)CBO
IC = -1 mA, IE = 0
-180
V
Collector to emitter breakdown voltage
V(BR)CEO
IC = -10 mA, RBE =
-120
V
Emitter to base breakdown voltage
V(BR)EBO
IE = -1 mA, IC = 0
-5
V
Collector cutoff current
ICBO
DC current transfer ratio
hFE
Collector to emitter saturation voltage
Base to emitter voltage
VCB = -160 V, IE = 0
-10
VCE = -5 V, IC = -0.15 A,
60
VCE = -5 V, IC = -0.5 A,
30
ìA
320
VCE(sat)
IC = -0.5 A, IB = -50 mA,
-1.0
V
VBE
VCE = -5 V, IC = -0.15 A,
-0.9
V
hFE Classification
Marking
EH
EJ
EK
hFE
60 to 120
100 to 200
160 to 320
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