TYSEMI 2SD2115S

Transistors
IC
SMD Type
Product specification
2SD2115S
TO-252
Features
+0.15
1.50 -0.15
+0.15
6.50-0.15
+0.2
5.30-0.2
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
Low frequency power amplifier.
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector to base voltage
Parameter
VCBO
150
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
2
A
Peak collector current
ICP
2.5
A
Collector power dissipation
PC
18
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector to base breakdown voltage
V(BR)CBO IC = 1 mA, IE = 0
150
V
Collector to emitter breakdown voltage
V(BR)CEO IC = 10 mA, RBE =
60
V
Emitter to base breakdown voltage
V(BR)EBO IE = 1 mA, IC = 0
5
Collector cutoff current
DC current transfer ratio
ICBO
VCB = 100 V, IE = 0
hFE
VCE = 5 V,IC = 1.5 A
V
10
ìA
150
Collector to emitter saturation voltage
VCE(sat) IC = 1.5 A,IB = 0.05 A
0.8
V
Base to emitter saturation voltage
VBE(sat) IC = 1.5 A,IB = 0.05 A
1.3
V
0.6
ìs
Fall time
http://www.twtysemi.com
tf
IC = 1.5 A,IB = -IB2 =50 mA
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