TYSEMI 2SB1308

Product specification
2SB1308
Features
Low saturation voltage, typically
VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A.
Excellent DC current gain characteristics.
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-30
V
Collector-emitter voltage
VCEO
-20
V
Emitter-base voltage
VEBO
-6
V
IC
-3
A
ICP *
-5
A
W
Collector current
Collector current(Pulse)
Collector power dissipation
PC
0.5
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Single pulse, Pw=10ms
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
BVCBO
IC=-50ìA
-30
V
Collector-emitter breakdown voltage
BVCEO
IC=-1mA
-20
V
Emitter-base breakdown voltage
-6
BVEBO
IE=-50ìA
Collector cutoff current
ICBO
VCB=-20V
Emitter cutoff current
IEBO
VEB=-5V
Collector-emitter saturation voltage
hFE
VCE=-2V, IC=-0.5A
V
82
Transition frequency
Cob
Output capacitance
fT
ìA
-0.5
ìA
390
VCE(sat) IC=-1.5A,IB=-0.15A
DC current transfer ratio
-0.5
-0.45
V
VCE=-6V, IE=50mA, f=100MHz
120
MHz
VCB=-20V, IE=0A, f=1MHz
60
pF
hFE Classification
BF
Marking
Rank
P
Q
R
hFE
82 180
120 270
180 390
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