Product specification DMG2307L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V(BR)DSS Features and Benefits RDS(ON) max ID max TA = 25°C 90mΩ @ VGS = -10V -3.8A 134mΩ @ VGS = -4.5V -3.1A • • • • • • -30V Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 standards for High Reliability • • • • • General Purpose Interfacing Switch Power Management Functions Load Switch for Portable Devices • Case: SOT-23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.08 grams (approximate) Ordering Information (Note 3) Part Number DMG2307L-7 Notes: Case SOT-23 Packaging 3000Tape & Reel 1. No purposefully added lead. Marking Information http://www.twtysemi.com [email protected] 1 of 2 Product specification DMG2307L Maximum Ratings @TA = 25°C unless otherwise specified NEW PRODUCT Characteristic Drain-Source Voltage Gate-Source Voltage Symbol VDSS VGSS Value -30 ±20 Units V V Continuous Drain Current (Note 4) VGS = -10V Steady State TA = 25°C TA = 70°C ID -2.5 -2.0 A Continuous Drain Current (Note 5) VGS = -10V Steady State TA = 25°C TA = 70°C ID -3.8 -3.0 A Continuous Drain Current (Note 5) VGS = -10V t≦10sec TA = 25°C TA = 70°C ID -4.6 -3.6 A Continuous Drain Current (Note 5) VGS = -4.5V Steady State TA = 25°C TA = 70°C ID -3.1 -2.5 A IDM -20 A Pulsed Drain Current (Note 5) Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 5) t ≦ 10sec Thermal Resistance, Junction to Ambient (Note 5) t ≦ 10sec Operating and Storage Temperature Range Symbol PD RθJA PD RθJA PD RθJA TJ, TSTG Value 0.76 159 1.36 94 1.9 65.8 -55 to +150 Units W °C/W W °C/W W °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 6) DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: @Tc = 25°C Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 - - -1.0 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) -1.0 - 70 105 4.8 -0.75 -3.0 90 134 -1.0 V VDS = VGS, ID = -250μA VGS = -10V, ID = -2.5A VGS = -4.5V, ID = -2.5A VDS = -10V, ID = -2.5A VGS = 0V, IS = -1A - 371.3 51.3 45.9 17 4.0 8.2 0.9 1.2 4.8 7.3 22.4 13.4 - RDS (ON) |Yfs| VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = -15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V,f = 1.0MHz VGS = -10V, VDS = -15V, ID = -3A VDS = -15V, VGS = -10V, RL = 15Ω, RG = 6Ω, ID = -1A 2. Device mounted on FR-4 PCB, with minimum recommended pad layout. 3. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 4. Short duration pulse test used to minimize self-heating effect. 5. Guaranteed by design. Not subject to product testing. http://www.twtysemi.com [email protected] 2 of 2