SMD Type Product specification KDB2552(FDB2552) Features Unit: mm (Typ.), VGS = 10V, ID = 16A +0.1 1.27-0.1 rDS(ON) = 32m TO-263 Qg(tot) = 39nC (Typ.), VGS = 10V +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse) +0.1 0.81-0.1 2.54 5.08 +0.2 2.54-0.2 +0.2 8.7-0.2 Low QRR Body Diode 5.60 Low Miller Charge 1 Gate 0.4 +0.1 -0.1 +0.2 -0.2 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 150 V Gate to source voltage VGSS 20 V Drain current-Continuous TC=25 ID TA=25 Power dissipation PD 37 A 5 A 150 W 1.0 Derate above 25 Thermal Resistance Junction to Ambient RèJA 43 Channel temperature Tch 175 Storage temperature Tstg -55 to +175 http://www.twtysemi.com [email protected] W/ /W 4008-318-123 1 of 2 SMD Type Product specification KDB2552(FDB2552) Electrical Characteristics Ta = 25 Parameter Symbol Drain to source breakdown voltage VDSS Drain cut-off current IDSS Testconditons ID=250ìA VGS=0V Min Typ IGSS VDS=120V,VGS=0 1 250 VGS= 20V 100 Gate threshold voltage VGS(th) VDS = VGS, ID = 250ìA VGS=10V,ID=16A 0.032 0.036 Drain to source on-state resistance RDS(on) VGS=6V,ID=8A 0.036 0.054 VGS=10V,ID=16A,TC=175 0.084 0.097 Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS=25V,VGS=0,f=1MHZ Unit V VDS=120V,VGS=0,TC=150 Gate leakage current Max 150 2.0 4.0 A nA V Ù 2800 pF 285 pF 55 pF Total Gate Charge at 10V Qg(TOT) VGS = 0V to 10V 39 51 nC Threshold Gate Charge Qg(TH) VGS = 0V to 2V 5.2 6.8 nC Gate to Source Gate Charge Qgs VDS = 75V, 13.5 nC Gate Charge Threshold to Plateau Qgs2 Ig=1.0mA 8.4 nC Gate to Drain "Miller" Charge Qgd ID = 16A 8.3 nC Turn-On Time tON Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Reverse Recovery Time Reverse Recovered Charge Source to Drain Diode Voltage http://www.twtysemi.com 62 ns td(ON) 12 ns tr 29 ns 36 ns td(OFF) VDD = 75V, ID = 16A VGS = 10V, RGS = 8.2 29 tf tOFF trr QRR VSD ISD = 16A, diSD/dt = 100A/ìs ns 97 ns 90 ns ISD = 16A, diSD/dt = 100A/ìs 242 nC ISD = 16A 1.25 V ISD = 8A 1.0 V [email protected] 4008-318-123 2 of 2