Transistors IC SMD Type Product specification 2SK3640 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max 3.80 +0.15 5.55-0.15 +0.1 0.80-0.1 Low Ciss: Ciss = 570 pF TYP. +0.25 2.65-0.1 MAX. (VGS = 4.5 V, ID = 9 A) +0.28 1.50-0.1 MAX. (VGS = 10 V, ID = 9 A) RDS(on)2 = 40 m +0.15 0.50-0.15 RDS(on)1 = 21 m +0.2 9.70-0.2 Low on-state resistance +0.15 4.60-0.15 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Symbol Rating Unit VDSS 30 V Gate to Source Voltage VGSS 16 V Drain Current(DC) ID(DS) 19 A ID(pulse) 76 A Drain Current(pulse) *1 Total Power Dissipation (TC = 25 ) PT 20 W Total Power Dissipation PT 1 W Channel Temperature Tch 150 Storage temperature Tstg -55 to +150 Single Avalanche Current *2 IAS 10 A Single Avalanche Energy *2 EAS 10 mJ *1PW 10 s, Duty Cycle 1% *2. Starting Tch = 25 , VDD = 15 V, RG = 25 , VGS = 20 http://www.twtysemi.com 0 V, L = 100 [email protected] H 4008-318-123 1 of 2 Transistors IC SMD Type Product specification 2SK3640 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain Cut-off Current IDSS VDS = 30 V, VGS = 0 V Gate Leakage Current IGSS VGS = Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Typ VDS = 10 V, ID = 9 A RDS(on)1 VGS = 10 V, ID = 9 A RDS(on)2 VGS = 4.5 V, ID = 9 A Max 10 16 V, VDS = 0 V VGS(off) VDS = 10 V, ID = 1 mA Yfs Min 10 1.5 3.7 2.5 7.4 Unit A A V S 15 21 24 40 Input Capacitance Ciss VDS = 10 V 570 pF Output Capacitance Coss VGS = 0 V 160 pF Feedback Capacitance Crss f = 1 MHz 100 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 9 A 7.7 ns VGS = 10 V 4.7 ns RG = 10 24 ns 7 ns Rise Time Turn-off Delay Time Fall Time Total Gate Charge tr td(off) tf Qg VDD = 24 V 14 nC Gate-Source Charge Qgs VGS = 10 V 2.4 nC Gate-Drain Charge Qgd ID = 19 A 4.3 nC VF(S-D) IF = 19 A, VGS = 0 V 0.95 V Reverse Recovery Time trr IF = 19 A, VGS = 0 V 21 ns Reverse Recovery Charge Qrr di/dt = 100 A/ 12 nC Diode Forward Voltage http://www.twtysemi.com [email protected] s 4008-318-123 2 of 2