SMD Type Product specification HR1A3M Features Up to 2A High Current Drives Such As IC Outputs and Actuators Available On-chip Bias Resistor Low Power Consumption During Drive Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -10 V Collector Current (DC) IC(DC) -1.0 A Collector Current (Pulse) IC(pulse) *1 -2.0 A Base Current (DC) IB(DC) -0.02 A Total Power Dissipation PT *2 2.0 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 *1 PW 10ms, Duty Cycle 50% *2 When 0.7mm x 16cm2 ceramic board is used. Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current DC Current Gain Symbol ICBO hFE * Testconditons Min Typ VCB = -60V, IE = 0 VCE = -2.0V , IC = -0.1A 50 VCE = -2.0V , IC = -0.5A 100 VCE = -2.0V , IC = -1.0A 50 Low Level Output Voltage VOL * VIN = -5.0V, IC = -0.4A Low Level Input Voltage VIL * VCE = -5.0V, IC = -100 A Max Unit -100 nA -0.4 V -0.3 V Input Resistance R1 0.7 1.0 1.3 k Emitter-Base Resistance R2 0.7 1.0 1.3 k * PW 350 s, Duty Cycle 2% http://www.twtysemi.com [email protected] 4008-318-123 1of 3 SMD Type Product specification HR1A3M Marking Marking MP Equivalent Circuit Electrical Characteristics Curves http://www.twtysemi.com [email protected] 4008-318-123 2of 3 SMD Type Product specification HR1A3M http://www.twtysemi.com [email protected] 4008-318-123 3of 3