Product specification IRLML2502PbF HEXFET® Power MOSFET l l l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching Lead-Free Halogen-Free G 1 VDSS = 20V 3 D S RDS(on) = 0.045Ω 2 Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Micro3™ Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units 20 4.2 3.4 33 1.25 0.8 0.01 ± 12 -55 to + 150 V A W W/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient http://www.twtysemi.com [email protected] Typ. Max. Units 75 100 °C/W 1 of 2 Product specification IRLML2502PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage Parameter 20 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.01 ––– RDS(on) Static Drain-to-Source On-Resistance ––– 0.035 0.045 ––– 0.050 0.080 Conditions VGS = 0V, ID = 250uA V/°C Reference to 25°C, ID = 1.0mA Ω VGS = 4.5V, ID = 4.2A VGS = 2.5V, ID = 3.6A VGS(th) Gate Threshold Voltage 0.60 ––– 1.2 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– -3.2 ––– mV/°C S VDS = VGS, ID = 250μA gfs Forward Transconductance 5.8 ––– ––– IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 25 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 Qg Total Gate Charge ––– 8.0 12 Q gs Gate-to-Source Charge ––– 1.8 2.7 Q gd Gate-to-Drain ("Miller") Charge ––– 1.7 2.6 VGS = 5.0V td(on) Turn-On Delay Time ––– 7.5 ––– VDD = 10V tr Rise Time ––– 10 ––– td(off) Turn-Off Delay Time ––– 54 ––– tf Fall Time ––– 26 ––– RD = 10Ω Ciss Input Capacitance ––– 740 ––– VGS = 0V Coss Output Capacitance ––– 90 ––– Crss Reverse Transfer Capacitance ––– 66 ––– Min. Typ. Max. IGSS μA nA d d VDS = 10V, ID = 4.0A VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 70°C VGS = 12V VGS = -12V ID = 4.0A nC ns pF VDS = 10V d ID = 1.0A RG = 6Ω d VDS = 15V ƒ = 1.0MHz Source-Drain Rating and Characteristics Parameter IS Continuous Source Current ––– (Body Diode) ISM c 1.3 ––– ––– 33 ––– ––– 1.2 VSD Diode Forward Voltage trr Reverse Recovery Time ––– 16 Q rr Reverse Recovery Charge ––– 8.6 Conditions MOSFET symbol A Pulsed Source Current (Body Diode) ––– Units D showing the integral reverse G p-n junction diode. V TJ = 25°C, IS = 1.3A, VGS = 0V 24 ns TJ = 25°C, IF = 1.3A 13 nC di/dt = 100A/μs d S d Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Surface mounted on FR-4 board, t ≤ 5sec. Pulse width ≤ 300μs; duty cycle ≤ 2%. http://www.twtysemi.com [email protected] 2 of 2