Product specification KCP53 -16 SOT-223 ■ Features Unit: mm +0.2 3.50-0.2 +0.2 -0.2 6.50 ● High collector current ● Low collector-emitter saturation voltage +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● For AF driver and output stages +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3 4 1.Base 1 3 2 2.Collector +0.1 -0.1 0.70 2.9 3.Emitter 4.6 ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-base voltage (open emitter) Parameter VCBO -100 V Collector-emitter voltage(open base) VCEO -80 V Emitter-base voltage( open collector) VEBO -5 V Collector current IC -1 A power dissipation PD 1.5 W RθJA 83.3 ℃/W Junction temperature Tj 150 ℃ Storage temperature Tstg -65 to +150 ℃ thermal resistance from junction to ambient ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=- 0.1mA,IE=0 -100 V Collector-emitter breakdown voltage V(BR)CEO IC= -10mA,IB=0 -80 V Base-emitter breakdown voltage V(BR)EBO IC= -10μA,IE=0 -5 V Collector cutoff current ICBO VCB = -30 V, IE = 0 -100 nA Emitter cutoff current IEBO VEB = -5 V, IC = 0 -100 nA IC = -5 mA; VCE = -2 V DC current gain hFE Collector-emitter saturation voltage Base to emitter voltage IC = -150 mA; VCE = -2 V 100 IC = -500 mA; VCE = -2 V 25 VCE(sat) IC = -500 mA; IB = -50 mA VBE Transition frequency 25 fT IC = -500 mA; VCE = -2 V IC = -50 mA; VCE = -10 V; f = 100 MHz 100 250 -0.5 V -1 V MHz ■ Marking Marking BCP53 http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 Product specification KCP53 -16 Typical Characteristics 10 3 1.6 MHz W fT 5 P tot 1.2 1 0.8 10 2 0.6 5 0.4 0.2 0 0 20 40 60 80 100 120 °C 10 1 150 TS V CE 10 1 10 3 10 3 -Ι C -Ι CBO nA max 10 3 10 mA 10 4 5 2 10 2 Transition frequency fT = f ( -IC) Total power dissipation Ptot = f(TS) h FE 10 0 = -10V 100 C 25 C -50 C 10 2 5 typ 10 1 10 1 5 10 0 0 10 VCE = -2V 10 0 10 1 10 2 10 3 mA 10 4 -Ι C DC current gain hFE = f (-IC) http://www.twtysemi.com [email protected] 10 -1 0 50 100 VCB = -30V C 150 TA Collector cutoff current ICBO = f (T A) 4008-318-123 2 of 3 Product specification KCP53 -16 10 4 10 4 -Ι C -Ι C mA mA 10 3 10 3 5 100 C 25 C -50C 10 2 100 C 25 C -50 C 10 2 5 10 1 10 1 5 10 0 0 0.2 0.4 0.6 - IC = f (-VBEsat ), h FE = 10 0.8 V 10 0 1.2 0 0.2 0.4 - IC = f ( -VCEsat), h FE = 10 -V BEsat Base-emitter saturation voltage 0.6 V 0.8 - V CEsat Collector-emitter saturation voltage 5 Ptot max Ptot DC D= 10 2 5 10 1 tp T tp T D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 0 10 -6 10 -5 10 -4 10 -3 Ptotmax / PtotDC = f (tp ) 10 -2 s 10 0 tp Permissible pulse load http://www.twtysemi.com [email protected] 4008-318-123 3 of 3