Product specification BCP56 -16 SOT-223 ■ Features Unit: mm +0.2 3.50-0.2 +0.2 -0.2 6.50 ● High collector current ● Low collector-emitter saturation voltage +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● For AF driver and output stages +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3 4 1 1 base 3 2 +0.1 0.70-0.1 2.9 4.6 2 collector 3 emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit collector-base voltage VCBO 100 V collector-emitter voltage VCEO 80 V emitter-base voltage VEBO 5 V collector current (DC) IC 1 A peak collector current (tP < 5ms) ICM 1.5 A power dissipation PD 1.5 W RθJA 94 ℃/W junction temperature Tj 150 ℃ storage temperature Tstg -65 to +150 ℃ thermal resistance from junction to ambient ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Testconditons Min Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 100 Collector-emitter breakdown voltage V(BR)CEO IC= 10mA,IB=0 80 Base-emitter breakdown voltage V(BR)EBO IC= 10μA,IE=0 5 Typ Max Unit Collector cut-off current ICBO IE = 0 A; VCB = 30 V 100 nA Emitter cut-off current IEBO IC = 0 A; VEB = 5 V 100 nA IC = 5 mA; VCE = 2 V DC current gain hFE Collector-emitter saturation voltage Transition frequency VCE(sat) fT 25 IC =150 mA; VCE = 2 V 100 IC = 500 mA; VCE = 2 V 25 250 IC = 500mA; IB = 50 mA 0.5 IC = 10 mA; VCE = 5 V; f = 100 MHz 130 V MHz ■ Marking Marking BCP 56 http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 Product specification BCP56 -16 Typical Characteristics 10 3 1800 mA fT MHz 5 1500 1350 IF 1200 1050 10 2 900 750 5 600 450 300 150 0 0 15 30 45 60 75 90 105 120 °C 10 1 10 0 150 TS V CE Total power dissipation Ptot = f(TS) Ι CBO nA max 100 C 25 C -50 C 10 2 5 typ 10 1 10 1 5 10 0 10 0 0 10 V CE 10 3 ΙC = 10V 10 3 10 mA 10 4 5 2 5 10 2 Transition frequency fT = f (IC) 10 3 h FE 5 10 1 10 1 10 2 10 3 = 2V ΙC DC current gain hFE = f (IC ) http://www.twtysemi.com 10 -1 mA 10 4 [email protected] V CB 0 50 100 = 30V C 150 TA Collector cutoff current ICBO = f (T A) 4008-318-123 2 of 3 Product specification BCP56 -16 10 4 ΙC 10 4 mA ΙC mA 10 3 10 3 100 C 25 C -50 C 10 2 10 1 10 1 10 0 IC = 100 C 25 C -50 C 10 2 0 0.2 f ( VBEsat ), h FE 0.4 0.6 0.8 V = 10 10 0 1.2 IC V BEsat Base-emitter saturation voltage = 0 0.2 f ( V CEsat ), h FE 0.4 = 10 0.6 V 0.8 V CEsat Collector-emitter saturation voltage 5 Ptot max Ptot DC D= tp T tp T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 10 0 10 -6 P totmax 10 -5 / P totDC = 10 -4 10 -3 10 -2 f ( tp ) s 10 0 tp Permissible pulse load http://www.twtysemi.com [email protected] 4008-318-123 3 of 3