Product specification 2SA812 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) 0.4 3 1 0.55 High Voltage: VCEO = -50 V 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -60 V Collector to emitter voltage VCEO -50 V Emitter to base voltage VEBO -5.0 V Collector current (DC) IC -100 mA power dissipation PC 200 mW Junction temperature Tj 150 Tstg -55 to +150 Storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICBO VCB = -60 V, IE = 0 A Emitter cutoff current IEBO VEB = -5.0 V, IC = 0 A DC current gain * hFE VCE = -6.0 V, IC = -1.0 mA Collector saturation voltage Min 90 VCE(sat) IC = -100 mA, IB = -10 mA Max Unit -0.1 A -0.1 A 200 600 -0.18 -0.3 -0.62 -0.68 V Base to emitter voltage VBE VCE = 6.0 V, IC = -1.0 mA Output capacitance Cob VCE = -10 V, IE = 0 A, f = 1.0 MHz 4.5 pF Transition frequency fT VCE = -6.0 V, IE = 10 mA 180 MHz * Pulsed: PW 350 s, Duty Cycle -0.58 Typ V 2% hFE Classification Marking hFE M4 90 180 http://www.twtysemi.com M5 135 270 M6 200 400 [email protected] M7 300 600 4008-318-123 1 of 2 Product specification 2SA812 Typical Characteristics Fig.1 Total Power Dissipation vs. Ambient Temperature Fig.3 Collector Current vs. Collector to Emitter Voltage Fig.5 Base and Collector Saturation Voltage vs. Collector Current http://www.twtysemi.com [email protected] Fig.2 Collector Current vs. Base to Emitter Voltage Fig.4 Collector Current vs. Collector to Emiiter Voltage Fig.6 DC Current Gain vs. Collector Current 4008-318-123 2 of 2