SMD Type MOSFET IC IC Product specification KI1912 SOT-363 ■ Features Unit: mm 6 ● RDS(on) = 280mΩ@ VGS=4.5V 5 4 2 3 1 ● Lead temperature for soldering :TL =260±5℃ +0.05 0.1-0.02 +0.05 0.95-0.05 +0.1 0.3-0.1 +0.1 2.1-0.1 0.1max ● P b -Free Packages are Available 0.36 +0.15 2.3-0.15 ● ESD Protected: 2000 V +0.1 1.25-0.1 ● VDS =20V,ID = 1.13A 0.525 +0.1 1.3-0.1 0.65 1 S1 4 S2 2 G1 5 G2 3 D2 6 D1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Ratings Unit Drain-Source Voltage VD S 20 V Gate-Source Voltage VG S ±12 V Continuous Drain Current TJ = 150℃ (Note 1) TA =25°C ID TA =85°C Pulsed Drain Current Continuous Diode Current (Diode Conduction) (Note 1) Maximum Power Dissipation (Note 1) TA =25°C I DM 4 A IS 0.48 A PD Operating Junction and Storage Temperature Range 0.57 W 0.3 100 ℃ /W RθJA 220 ℃/W TJ, Tst g -55 to 150 ℃ RθJF Maximum Junction-to-Ambient (Note 1) A 0.81 TA=85°C Maximum Junction-to-Foot(Drain) 1.13 Note: 1. Surface Mounted on 1” x 1” FR4 Board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 SMD Type MOSFET IC IC Product specification KI1912 ■ Electrical Characteristics Tj = 25℃ unless otherwise noted Parameter Symbol Drain-Source Breakdown Voltage BV DSS Zero Gate Voltage Drain Current IDSS Gate Threshold Voltage Gate-Body Leakage Drain-Source On-State Resistance (Note 2) Test conditions Min V GS = 0 V, I D = 100 µA Typ 20 (Note 2) 1.0 V DS = 16V , V GS = 0V , TJ =85℃ 5.0 VG S(th) V DS = V G S , ID = 100uA IGSS V DS = 0V , V GS = ±12V ±10 V GS = 4.5V , ID = 1.13A 280 RDS(on) V GS = 2.5V , ID = 0.99A 360 Forward Transconductance (Note 2) ID(on) gfs 0.45 = 10V , ID V 2 = 1.13A 2.6 Gate-Source Charge (Note 3) Q gs Gate-Drain Charge (Note 3) Q gd 0.23 Turn-On Delay Time (Note 3) t d(on) 45 70 85 130 350 530 210 320 Turn-Off Delay Time (Note 3) Fall Time (Note 3) Diode Forward Voltage t d(off) 0.65 V DS = 10 V, V GS = 4.5 V, ID = 1.13 A V DS = 10V , RL = 20 Ω , I D= 0.5 A V GS = 4.5V , RGEN = 6Ω tf (Note 2) V SD mΩ S Qg tr µA A Total Gate Charge (Note 3) Rise Time (Note 3) µA 450 V DS =5V , VG S = 4.5V V DS Unit V V DS = 16V , V GS = 0V V GS = 1.8V , ID = 0.2A On-State Drain Current Max 1.0 nC 0.2 IS = 0.48 A, V GS = 0 V 1.2 ns V Notes: 2. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% . 3. Guaranteed by design, not subject to production testing. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2