Transistors IC IC IC IC SMD SMD Type Type Product specification KTS1C1S250 Features Typical RDS(on) (N-Channel)=0.9 Typical RDS(on) (N-Channel)=2.1 Gate-source zener diode Standard outline for easy automated surface mount assembly Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k ) Gate-to-Source Voltage Symbol N-Channel P-Channel VDS 250 250 VDGR 250 250 25 VGS ID 0.75 0.60 Continuous Drain Current, @ Tc = 100 ID 0.47 0.38 Pulsed Drain Current IDM 3 2.4 Single Operation Total Dissipation at TC = 25 Dual Operation PTOT TJ, TSTG Junction and Storage Temperature Range Thermal Resistance Junction-ambient Max (Single Operating) Rthj-amb * (Dual Operating) V V Continuous Drain Current, @ Tc = 25 Total Dissipation at TC = 25 Unit 1.6 2 A W -65 to 150 62.5 78 /W * Mounted on 0.5 in²pad of 2oz. copper. http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 IC Transistors IC IC IC SMD SMD Type Type Product specification KTS1C1S250 Electrical Characteristics Ta = 25 Parameter V(BR)DSS Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Input Capacitance IDSS IGSS VGS(th) RDS(on) Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Input Resistance Turn-on Delay Time Rise Time Total Gate Charge Rg td(on) tr Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-off Delay Time Fall Time Source-drain Current Source-drain Current (pulsed) *1 http://www.twtysemi.com Testconditons Symbol td(off) tf ID = 250 A, VGS = 0 ID = 250 A, VGS = 0 Min N-Ch 250 P-Ch 250 Typ Max Unit V V N-Ch 1 A VDS = Max Rating P-Ch 1 A VDS = Max Rating, TC = 125 N-Ch 10 A P-Ch 10 A VGS = 20V N-Ch 10 A P-Ch 10 A VDS = VGS, ID = 250 A N-Ch 2 3 4 V VDS = VGS, ID = 250 A P-Ch 2 3 4 V VGS = 10V, ID = 0.40A N-Ch 0.9 1.4 VGS = 10V, ID = 0.30A P-Ch 2.1 2.8 N-Ch 325 N-Channel P-Ch 260 pF pF VDS = 25V, f = 1 MHz, VGS = 0 N-Ch 51 pF P-Channel P-Ch 52 pF VDS = 25V, f = 1 MHz, VGS = 0 N-Ch 24 pF P-Ch 25.5 pF f=1 MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain N-Ch 6 P-Ch 6 N-Channel N-Ch 9 ns P-Ch 12 ns N-Ch 11 ns ns VDD=125V,ID=1.5A,RG=4.7 , VGS = 10V P-Channel VDD=125V,ID=1.5A,RG=4.7 , VGS=10V N-Channel P-Ch 22 N-Ch 15 20 nC VDD =200V, ID=1.5A,VGS = 10V P-Ch 16 21 nC N-Ch 1.9 nC P-Channel P-Ch 1.4 nC VDD = 200V, ID= 1.5A,VGS = 10V N-Ch 7 nC P-Ch 7.6 nC N-Channel N-Ch 31 ns VDD = 125V, ID = 1.5A,RG = 4.7 , VGS = 10V P-Ch 29.5 ns P-Channel N-Ch 11 ns VDD = 200V, ID = 1.5A,RG = 4.7 , VGS = 10V P-Ch 7 ns ISD ISDM [email protected] N-Ch 0.75 A P-Ch 0.6 A N-Ch 3 A P-Ch 2.4 A 4008-318-123 2 of 3 IC Transistors IC IC IC SMD SMD Type Type Product specification KTS1C1S250 Electrical Characteristics Ta = 25 Parameter Forward On Voltage *2 VSD trr Reverse Recovery Time Reverse Recovery Charge Qrr Reverse Recovery Curren IRRM Gate-Source Breakdown Voltage *1 Pulsed: Pulse duration = 300 Testconditons Symbol BVGSO ISD = 3A, VGS = 0 Min Typ N-Ch ISD = 3A, VGS = 0 P-Ch N-Channel N-Ch 127 ISD = 0.8A, di/dt = 100A/ s, VDD = 50V, Tj = 150 P-Channel ISD = 0.60A, di/dt = 100A/ s, VDD = 40V, Tj = 150 Igs= 500 A (Open Drain) Max Unit 1.5 V 1.5 V ns P-Ch 143 ns N-Ch 450 nC P-Ch 806 nC N-Ch 7 A P-Ch 11 25 A V s, duty cycle 1.5 %. *2 Pulse width limited by safe operating area http://www.twtysemi.com [email protected] 4008-318-123 3 of 3