RoHS KSA642 KSA642 D T ,. L TRANSISTOR (PNP) FEATURES Power dissipation TO-92 PD: 0.4 W (Tamb=25℃) 1. EMITTER Collector current ICM: -0.3 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range 2. BASE IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Collector cut-off current R T C E L Emitter cut-off current DC current gain * Collector-emitter saturation voltage* E ICBO C 3. COLLECTOR O 1 2 3 unless otherwise specified) Test N conditions O MIN MAX UNIT Ic= -100µA , IE=0 -30 V IC=-10 mA , IB=0 -25 V IE=-10µA, IC=0 -5 V VCB=-25V, IE=0 -0.1 µA IEBO VCB=-3V, IC=0 -0.1 µA hFE VCE=-1 V, IC= -50mA VCEsat IC= -0.3A, IB= -30mA 70 400 -0.6 V * Pulse Test: pw≤350µs, duty cycle≤2%. CLASSIFICATION OF hFE J E Rank Range O Y G 70-140 120-240 200-400 W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]