ACE ACE1522B

ACE1522B
P-Channel Enhancement Mode Field Effect Transistor
Description
Line current interrupter in telephone sets Relay High speed and line transformer drivers.
Features




VDS(V)=-50V, ID=-0.13A
RDS(ON)<[email protected]=-5V
Voltage controlled p-channel small signal switch
High density cell design for low RDS(ON)
Absolute Maximum Ratings
Parameter
Symbol
Max
Unit
Drain-Source Voltage
VDS
-50
V
Gate-Source Voltage
VGS
±20
V
Drain Current (Continuous)
ID
-0.13
Drain Current (Pulse)
ID
-0.52
Power Dissipation(1)
PD
0.35
Operating and Storage Temperature Range TJ,TSTG -55 to 150
A
W
O
C
Packaging Type
SOT-23-3
Ordering information
ACE1522B XX + H
Halogen - free
Pb - free
BM : SOT-23-3
VER 1.2
1
ACE1522B
P-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
O
TA=25 C unless otherwise noted
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
On/Off characteristics
Drain-Source Breakdown Voltage
V(BR)DSS
Zero Gate Voltage Drain Current
IDSS
Gate Leakage Current
IGSS
VGS=0V, ID=-250uA
-50
V
VDS=-50V, VGS=0V
VDS=-50V, VGS=0V,
TJ=125℃
VGS=±20V, VDS=0V
-15
-60
uA
±10
nA
10
Ω
-2
V
On characteristics b
Static Drain-Source On-Resistance
RDS(ON)
VGS=-5V, ID=-0.1A
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=-1mA
-0.8
-1.75
Forward Transconductance
gFS
VDS=-25V, ID=-0.1A
0.05
0.6
Switching characteristics
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
Td(on)
Turn-On Rise Time
tf
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
S
b
VDS=-25V, ID=-0.1A
VGS=-5V
VDD=-30V, ID=-0.27A,
VGS=-10V
RGEN=6Ω
0.9
1.3
0.2
nC
0.3
2.5
5
6.3
13
10
20
4.8
9.6
ns
Dynamic characteristics
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate Resistance
RG
VDS=-10V, VGS=0V
f=200KHz
VGS=-15mV,
f=1.0MHz
33
38
pF
36
Ω
9
Drain-source diode characteristics and maximum ratings b
Drain-Source Diode Forward
VSD
VGS=0V, IS=-0.26A (2)
-0.8
Voltage
-1.2
V
Note: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the
user's board design.
2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
VER 1.2
2
ACE1522B
P-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
3
ACE1522B
P-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
4
ACE1522B
P-Channel Enhancement Mode Field Effect Transistor
Packing Information
SOT-23-3
Unit: mm
VER 1.2
5
ACE1522B
P-Channel Enhancement Mode Field Effect Transistor
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
6