AO4752 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (SRFET) • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial VDS 30V 15A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 8.8mΩ RDS(ON) (at VGS=4.5V) < 15.5mΩ 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current C Units V ±20 V 15 ID TA=70°C Maximum 30 12 A IDM 102 Avalanche Current C IAS 22 A Avalanche energy L=0.05mH C EAS 12 mJ VDS Spike VSPIKE 36 V Pulsed Drain Current Power Dissipation B 100ns TA=25°C PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 0: April 2012 3.1 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL -55 to 150 Typ 31 59 16 www.aosmd.com °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 AO4752 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=10mA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance 100 1.5 VGS=10V, ID=15A TJ=125°C VGS=4.5V, ID=10A gFS Forward Transconductance VDS=5V, ID=15A VSD Diode Forward Voltage IS=0.2A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=15V, ID=15A 1 Units V 0.5 TJ=55°C VGS(th) Max 30 VDS=30V, VGS=0V IGSS Coss Typ 2 ±100 nA 2.5 V 7.2 8.8 10.2 12.5 12.3 15.5 71 0.45 mA mΩ mΩ S 0.65 V 4 A 605 pF 275 pF 36.5 pF 2 3 Ω 11 15 nC 5.5 8 nC 2 nC Gate Drain Charge 2.6 nC Turn-On DelayTime 5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 2.5 ns 17 ns tf Turn-Off Fall Time 3 ns trr Body Diode Reverse Recovery Time Qrr IF=15A, dI/dt=500A/µs 11.5 Body Diode Reverse Recovery Charge IF=15A, dI/dt=500A/µs 12.5 ns nC VGS=10V, VDS=15V, RL=1Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: April 2012 www.aosmd.com Page 2 of 6 AO4752 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 10V 7V VDS=5V 5V 4.5V 60 4V 40 ID(A) ID (A) 60 40 125°C 20 20 3.5V 25°C VGS=3V 0 0 0 1 2 3 4 0 5 18 2 3 4 5 6 1.6 Normalized On-Resistance 16 VGS=4.5V 14 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 12 10 8 6 VGS=10V 4 2 VGS=10V ID=15A 1.4 1.2 VGS=4.5V ID=10A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 25 1.0E+01 ID=15A 1.0E+00 20 125°C 40 IS (A) RDS(ON) (mΩ Ω) 1.0E-01 125°C 15 1.0E-02 25°C 10 1.0E-03 5 25°C 1.0E-04 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: April 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4752 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1800 1400 Capacitance (pF) VGS (Volts) 1600 VDS=15V ID=15A 8 6 4 Ciss 1200 1000 800 600 Coss 400 2 200 0 Crss 0 0 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics 15 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 1ms 1000.0 TA=25°C 100.0 TA=100°C 10.0 ID (Amps) IAR (A) Peak Avalanche Current 100.0 TA=150°C 10.0 1ms 1.0 TJ(Max)=150°C TA=25°C 0.1 TA=125°C 10µs 100µs RDS(ON) limited 10s DC 0.0 1.0 1 10 100 0.01 1000 Time in avalanche, tA (µ µs) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 VDS (Volts) 10 100 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev 0: April 2012 www.aosmd.com Page 4 of 6 AO4752 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: April 2012 www.aosmd.com Page 5 of 6 AO4752 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: April 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6