AO4815 30V Dual P-Channel MOSFET General Description Product Summary The AO4815 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. VDS (V) = -30V ID = -8A (VGS = -20V) RDS(ON) < 18mΩ (VGS = -20V) RDS(ON) < 20mΩ (VGS = -10V) ESD Rating: 2KV HBM 100% UIS Tested 100% Rg Tested SOIC-8 Top View D1 Bottom View D2 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 S2 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A B TA=25°C Power Dissipation A Junction and Storage Temperature Range Maximum Junction-to-Lead C ±25 V ID -6.9 IDM -40 -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 1.44 TJ, TSTG t ≤ 10s Steady-State Steady-State A 2 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V -8 TA=70°C Pulsed Drain Current Maximum -30 RθJA RθJL Typ 50 73 31 °C Max 62.5 110 40 Units °C/W °C/W °C/W www.aosmd.com AO4815 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V -40 TJ=55°C VGS=-20V, ID=-8A Static Drain-Source On-Resistance Max TJ=125°C VGS=-10V, ID=-8A Units V VDS=-24V, VGS=0V IDSS RDS(ON) Typ -5 µA ±1 µA -2.8 -3 V 14.1 18 19 24 16.2 20 A mΩ mΩ VGS=-4.5V, ID=-5A 37 mΩ Forward Transconductance VDS=-5V, ID=-8A 15 S VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current gFS DYNAMIC PARAMETERS Ciss Input Capacitance Coss 2330 VGS=0V, VDS=-15V, f=1MHz Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance -1 V -2.6 A 2900 480 320 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=-10V, VDS=-15V, ID=-8A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/µs VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω IF=-8A, dI/dt=100A/µs Body Diode Reverse Recovery Time pF pF pF 6.8 10 Ω 41 52 nC 10 nC 12 nC 13 ns 12 ns 51 ns 30.5 ns 28 35 20.5 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in SOA curve provides a single pulse rating. Rev 4: Nov. 2010 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4815 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 30 -6V VDS=-5V -5V 20 -10V 20 15 -ID(A) -ID (A) -4.5V 125°C 10 10 VGS=-4V 0 0 0 1 2 3 4 -VDS (Volts) Figure 1: On-Region Characteristics 5 2 18 2.5 3 3.5 4 4.5 -VGS(Volts) Figure 2: Transfer Characteristics 5 Normalized On-Resistance 1.6 VGS=-10V 17 RDS(ON) (mΩ ) 25°C 5 16 15 VGS=-20V 14 1.4 VGS=-10V ID=-8A 1.2 VGS=-20V ID=-8A 1 0.8 0 5 10 15 20 25 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+01 ID=-8A 1.0E+00 50 RDS(ON) (mΩ ) 1.0E-01 125°C -IS (A) 40 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1.0E-02 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF AOS RESERVES 1.0E-03 THE RIGHT TO IMPROVE PRODUCT DESIGN, 125°C 30 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-04 20 25°C 25°C 1.0E-05 10 1.0E-06 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4815 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=-15V ID=-8A Capacitance (pF) -VGS (Volts) Ciss 2500 8 6 4 2 2000 1500 Coss 1000 Crss 500 0 0 0 5 10 15 20 25 30 35 40 -Qg (nC) Figure 7: Gate-Charge Characteristics 45 0 100.0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 40 TJ(Max)=150°C TA=25°C 10µs 100µ 10ms 1s 1.0 RDS(ON) limited 30 1ms Power (W) 10.0 ID (Amps) 30 0.1s 10s DC 0.1 20 10 TJ(Max)=150°C TA=25°C 0.0 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (NoteE) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, PD FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000 www.aosmd.com