AOD421 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD421 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for load switching. It is ESD protected. VDS (V) = -20V ID = -12.5 A (VGS = -10V) RDS(ON) < 75mΩ (VGS = -10V) RDS(ON) < 95mΩ (VGS = -4.5V) RDS(ON) < 145mΩ (VGS = -2.5V) -RoHS Compliant -Halogen Free* ESD Protected! 100% Rg Tested! TO-252 D-PAK Top View D D Bottom View G G S S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain Current G TA=70°C Power Dissipation Power Dissipation A TA=25°C Junction and Storage Temperature Range B V -8.9 IDM -30 2 W 1.33 -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. W 9.4 TJ, TSTG t ≤ 10s Steady-State Steady-State A 18.8 PDSM TA=70°C Maximum Junction-to-Case ±12 ID PD TC=100°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V -12.5 Pulsed Drain Current C TC=25°C B Maximum -20 RθJA RθJC Typ 23 50 6 °C Max 28 60 8 Units °C/W °C/W °C/W AOD421 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -20 -0.5 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.7 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -15 TJ=55°C -2.5 ±1 µA ±10 µA TJ=125°C mΩ mΩ IS Maximum Body-Diode Continuous Current Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time -1 8.8 S -0.81 V 512 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-12.5A VGS=-10V, VDS=-10V, RL=0.75Ω, RGEN=3Ω -8.5 A 620 pF 77 pF 62 pF 9.2 13 Ω 4.6 nC 0.9 nC 2.1 nC 5.2 ns 38 ns 17 ns 31 ns ns nC tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=-12.5A, dI/dt=100A/µs 19 Qrr Body Diode Reverse Recovery Charge IF=-12.5A, dI/dt=100A/µs 6.3 Body Diode Reverse Recovery Time mΩ 95 DYNAMIC PARAMETERS Input Capacitance Ciss SWITCHING PARAMETERS Total Gate Charge Qg 75 105 145 IS=-1A,VGS=0V Gate resistance 61 83 75 Diode Forward Voltage Rg V A 110 Forward Transconductance Reverse Transfer Capacitance -1.4 VGS=-4.5V, ID=-3A gFS Output Capacitance -0.9 VGS=-2.5V, ID=-1A VSD Coss µΑ VDS=0V, VGS=±12V VDS=-5V, ID=-12.5A Crss Units VDS=0V, VGS=±10V VGS=-10V, ID=-12.5A Static Drain-Source On-Resistance Max V VDS=-16V, VGS=0V IDSS RDS(ON) Typ A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev 1: Sep 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD421 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 40 -10.0V VDS=-5V 35 30 -5.0V 25 -4.0V 20 -3.0V 15 -2.5V 10 -2.0V 5 6 -ID(A) -ID (A) 8 4 125°C 2 25°C VGS=-1.5V 0 0 0 1 2 3 4 5 0 0.5 160 1.5 2 2.5 3 3.5 1.6 Normalized On-Resistance ID=-3A, VGS=-4.5V 140 VGS=-2.5V 120 RDS(ON) (mΩ ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 100 VGS=-4.5V 80 60 VGS=-10V 40 20 ID=-12.5A, VGS=-10V 1.4 1.2 ID=-1A, VGS=-2.5V 1.0 0.8 0 2 4 6 8 10 12 14 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 200 1E+01 ID=-12.5A 180 1E+00 125°C 1E-01 125°C 140 -IS (A) RDS(ON) (mΩ ) 160 120 100 25°C 1E-02 1E-03 1E-04 80 1E-05 60 25°C 1E-06 40 0.0 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD421 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 ID=-12.5A Ciss 600 Capacitance (pF) -VGS (Volts) 4 3 2 400 200 1 Coss Crss 0 0 0 1 2 3 4 5 6 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics 100 100 TJ(Max)=175C, TA=25°C 80 70 DC Power (W) 100µs ID (Amps) 10 TJ(Max)=175°C TC=25°C 90 10µs 1ms 60 50 40 30 1 20 RDS(ON) limited 10 0 0.0001 0.1 0.1 5 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-tocase (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=8°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD421 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 14 18 Power Dissipation (W) Current rating ID(A) 12 10 8 6 4 16 14 12 10 2 8 6 4 2 0 0 0 25 50 75 100 125 150 TCASE (°C) Figure 12: Current De-rating (Note B) 175 0 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) 100 50 TJ(Max)=150°C, T A=25°C 10µs 10 TA=25°C 40 Power (W) ID (Amps) 100µs 1ms 100m 1 1s 10s DC RDS(ON) limited 1 10 20 10 0 0.001 0.1 0.1 30 100 VDS (Volts) Figure 14: Maximum Forward Biased Safe Operating Area (Note H) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 Single Pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W PD Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD421 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC Qgd + + DUT Qgs Vds VDC Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs - DUT Vgs td(off) tr 90% Vdd VDC tf + Rg Vgs 10% Vds Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com