AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AON5802 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AON5802 is Pb-free (meets ROHS & Sony 259 specifications). DFN 2X5 G1 S1 G2 S1 S2 Features VDS (V) = 30V ID = 7.2A (VGS = 4.5V) RDS(ON) < 20 mΩ (VGS = 4.5V) RDS(ON) < 22 mΩ (VGS = 4.0V) RDS(ON) < 24 mΩ (VGS = 3.1V) RDS(ON) < 30 mΩ (VGS = 2.5V) ESD Protected D1 S2 D2 D1/D2 G1 Top View G2 S2 G1 S2 S1 VGS Gate-Source Voltage TA=25°C Continuous Drain Current RθJA=75°C/W TA=70°C B Pulsed Drain Current A S2 S1 Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Power Dissipation RθJA=75°C/W G2 S1 Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. A 65 1.7 W 1.0 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State V 5.6 PDSM Junction and Storage Temperature Range 30 7.2 IDM TA=70°C Units ±12 ID TA=25°C Maximum RθJA RθJL Typ 30 61 4.5 °C Max 40 75 6 Units °C/W °C/W °C/W www.aosmd.com AON5802 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS=±10V BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 0.6 ID(ON) On state drain current VGS=4.5V, VDS=5V 65 VGS=4.5V, ID=7.2A TJ=55°C Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 17 20 13 17.2 22 15 19 24 VGS=2.5V, ID=3A 16 22 30 VDS=5V, ID=7.2A VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=7.2A 37 0.5 µA V A VGS=3.1V, ID=4A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance 13 30 IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Crss 1.5 26 VSD Coss 1 20 Forward Transconductance µA V VGS=4.0V, ID=4A gFS IS 5 10 TJ=125°C Units V VDS=24V, VGS=0V Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 IDSS RDS(ON) Typ 0.76 mΩ S 0.9 V 4.5 A 1115 pF 125 pF 100 pF 1.5 Ω 10.7 nC 2.1 nC nC Qgd Gate Drain Charge 4.3 tD(on) Turn-On DelayTime 3.4 ns tr Turn-On Rise Time 11.2 ns tD(off) Turn-Off DelayTime 27.2 ns tf Turn-Off Fall Time 6.7 ns ns nC VGS=10V, VDS=15V, RL=2.1Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=7.2A, dI/dt=100A/µs 24.6 Qrr Body Diode Reverse Recovery Charge IF=7.2A, dI/dt=100A/µs 12.9 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the steady state thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 4: Sep 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON5802 20 65 60 55 50 45 40 35 30 25 20 15 10 5 0 10V 4.5V VDS=5V 15 3V ID(A) ID (A) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2.5V 10 125°C 5 VGS=2V 25°C 0 0 1 2 3 4 0 5 0.5 40 1.5 2 2.5 Normalized On-Resistance 1.8 VGS=2.5V 30 RDS(ON) (mΩ) 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 20 VGS=4.5V 10 VGS=4.5V ID=7.2A 1.6 1.4 VGS=2.5V ID=3A 1.2 1.0 0 0 5 10 15 20 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+01 ID=7.2A 125°C 1.0E+00 50 1.0E-01 125°C 30 25°C IS (A) 40 RDS(ON) (mΩ) 50 1.0E-02 1.0E-03 20 25°C 1.0E-04 10 1.0E-05 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AON5802 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 VDS=15V ID=7.2A 8 Ciss Capacitance (pF) VGS (Volts) 1200 6 4 800 Coss 400 2 0 Crss 0 0 4 8 12 16 20 24 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 100.0 RDS(ON) limited 10µs 160 Power (W) 10.0 ID (Amps) 100µs 1ms 1.0 DC 10ms 100ms 1s 10s TJ(Max)=150°C, TA=25°C 0.1 0.1 1 10 TJ(Max)=150°C TA=25°C 120 80 40 0 0.0001 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note E) ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJA.RθJA RθJA=75°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse 0.01 0.00001 0.0001 0.001 Ton 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com