AOTF15B60D 600V, 15A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copackage diode is targeted for minimal losses in motor control applications. VCE IC (TC=100°C) 600V 15A VCE(sat) (TC=25°C) 1.6V Top View C TO-220F G G C E E AOTF15B60D Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE Gate-Emitter Voltage V GE IC Pulsed Collector Current, Limited by TJmax I CM Turn off SOA, VCE ≤ 600V, Limited by TJmax I LM TC=25°C TC=100°C Units V ±20 V 30$ Continuous Collector TC=25°C TC=100°C Current Continuous Diode Forward Current AOTF15B60D 600 15$ 60 A 60 A 30 IF A 15 A Diode Pulsed Current, Limited by TJmax I FM 60 A Short circuit withstanding time VGE = 15V, VCE ≤ 400V, Delay between short circuits ≥ 1.0s, TC=150°C t SC 10 µs TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Maximum Diode Junction-to-Case PD T J , T STG TL Symbol R θ JA R θ JC R θ JC 50 25 W -55 to 150 °C 300 °C AOTF15B60D 65 3 Units °C/W °C/W 4 °C/W $:TO220F IC Follow TO220 Rev0: July 2012 www.aosmd.com Page 1 of 9 AOTF15B60D Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage V CE(sat) VF V GE(th) I CES I GES g FS Min IC=1mA, VGE=0V, TJ=25°C VGE=15V, IC=15A Collector-Emitter Saturation Voltage VGE=0V, IC=15A Diode Forward Voltage VCE=600V, VGE=0V Zero Gate Voltage Collector Current Gate-Emitter leakage current Forward Transconductance Max Units V 600 - - TJ=25°C - 1.6 1.8 TJ=125°C - 1.85 - TJ=150°C - 1.92 - TJ=25°C - 1.43 1.72 TJ=125°C - 1.39 - TJ=150°C - 1.36 - - 5.8 - TJ=25°C - - 10 TJ=125°C - - 300 TJ=150°C - - 1500 VCE=VGE, IC=1mA Gate-Emitter Threshold Voltage Typ V V V µA VCE=0V, VGE=±20V - - ±100 VCE=20V, IC=15A - 7.7 - - 1290 - pF - 97 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCE=25V, f=1MHz nA S C oes Output Capacitance C res Reverse Transfer Capacitance - 3.1 - pF Qg Total Gate Charge - 25.4 - nC Q ge Gate to Emitter Charge - 9.5 - nC - 8.3 - nC - 74 - A - 2.4 - Ω VGE=15V, VCE=480V, IC=15A Q gc Gate to Collector Charge Short circuit collector current, Max. 1000 short circuits, Delay between VGE=15V, VCE=400V, RG=20Ω I C(SC) short circuits ≥ 1.0s VGE=0V, VCE=0V, f=1MHz Gate resistance Rg SWITCHING PARAMETERS, (Load Iductive, TJ=25°C) t D(on) Turn-On DelayTime - 21 - ns tr Turn-On Rise Time - 19 - ns t D(off) Turn-Off Delay Time - 73 - ns tf Turn-Off Fall Time - 10 - ns E on Turn-On Energy - 0.42 - mJ E off Turn-Off Energy - 0.11 - mJ E total t rr Total Switching Energy - 0.53 - mJ Diode Reverse Recovery Time - 196 - Q rr Diode Reverse Recovery Charge - 0.48 - ns µC - 5.8 - A TJ=25°C VGE=15V, VCE=400V, IC=15A, RG=20Ω, Parasitic Ιnductance=100nH TJ=25°C IF=15A,dI/dt=200A/µs,VCE=400V I rm Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Iductive, TJ=150°C) t D(on) Turn-On DelayTime - 21 - ns tr Turn-On Rise Time - 19 - ns t D(off) Turn-Off Delay Time - 91 - ns tf Turn-Off Fall Time - 8 - ns E on Turn-On Energy - 0.54 - mJ E off Turn-Off Energy - 0.19 - mJ E total t rr Total Switching Energy - 0.73 - mJ Diode Reverse Recovery Time - 235 - Q rr Diode Reverse Recovery Charge - 1.1 - ns µC I rm Diode Peak Reverse Recovery Current - 8.5 - A TJ=150°C VGE=15V, VCE=400V, IC=15A, RG=20Ω, Parasitic Inductance=100nH TJ=150°C IF=15A,dI/dt=200A/µs,VCE=400V THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: July 2012 www.aosmd.com Page 2 of 9 AOTF15B60D □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 20V 20V 70 17V 80 17V 60 15V IC (A) IC (A) 15V 60 13V 40 50 13V 40 30 11V 11V 20 20 VGE= 7V 9V 9V 10 VGE=7V 0 0 0 1 2 3 4 5 6 7 0 VCE(V) Fig 1: Output Characteristic (Tj=25°C ) 1 2 3 5 6 7 90 70 VCE=20V -40°C 80 -40°C 60 70 50 25°C 150°C 40 150°C 60 IF (A) IC (A) 4 VCE(V) Fig 2: Output Characteristic (Tj=150°C ) 30 50 40 25°C 30 20 20 10 10 0 0 4 7 10 13 0.0 16 VGE(V) Fig 3: Transfer Characteristic 0.5 1.0 1.5 2.0 2.5 3.0 VF (V) Fig 4: Diode Characteristic 4 50 100 40 80 30 60 20 40 10 20 Time (µ µS) VCE(sat) (V) 3 IC=15A 2 1 IC=7.5A 0 0 0 25 50 75 100 125 150 Temperature (°C) Fig 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev0: July 2012 www.aosmd.com Current(A) IC=30A 0 5 8 11 14 17 20 VGE (V) Fig 6: VGE vs. Short Circuit Time (VCE=400V,TC=25°C ) Page 3 of 9 AOTF15B60D □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=480V IC=15A 12 Cies 9 Capacitance (pF) IC (A) 1000 6 3 Coes 100 10 0 Cres 1 0 5 10 15 20 25 30 0 5 Qg(nC) Fig 7: Gate-Charge Characteristics 10 15 20 25 30 35 40 VCE(V) Fig 8: Capacitance Characteristic Ic (A) 100 10 1 10 100 VCE (V) Fig 10: Reverse Bias SOA (Tj=150°C,V GE=15V) 1,000 50 Power Disspation (W) 40 30 20 10 0 25 50 75 100 125 150 TCASE(°C) Fig 11: Power Disspation as a Function of Case Rev0: July 2012 www.aosmd.com Page 4 of 9 AOTF15B60D ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10,000 Td(off) Tf Td(on) Tr Td(off) Tf Switching Time (nS) Switching Time (nS) 1000 100 10 Tr 100 10 1 1 0 5 10 15 20 25 IC (A) Figure 12: Switching Time vs. IC (Tj=150°C,V GE=15V,VCE=400V,Rg=20Ω Ω) 30 35 0 1000 50 100 150 200 Rg (Ω Ω) Figure 13: Switching Time vs. Rg (Tj=150°C,V GE=15V,VCE=400V,IC=15A) 250 8 Td(off) Tf Td(on) Tr 7 100 VGE(TH)(V) Switching Time (nS) Td(on) 1,000 6 5 4 10 3 2 1 0 75 100 125 150 TJ (°C) Figure 14: Switching Time vs.Tj ( VGE=15V,VCE=400V,IC=15A,Rg=20Ω Ω) Rev0: July 2012 25 50 175 www.aosmd.com 0 30 60 90 TJ (°C) Figure 15: VGE(TH) vs. Tj 120 150 Page 5 of 9 AOTF15B60D ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 1.8 Eoff Eoff 1.5 Eon 1.5 Switching Energy (mJ) SwitchIng Energy (mJ) Eon Etotal 1 0.5 Etotal 1.2 0.9 0.6 0.3 0 0.0 0 5 10 15 20 25 30 IC (A) Figure 16: Switching Loss vs. IC (Tj=150°C,V GE=15V,VCE=400V,Rg=20Ω Ω) 35 0 1 50 150 200 Rg (Ω Ω) Figure 17: Switching Loss vs. Rg (Tj=150°C,V GE=15V,VCE=400V,IC=15A) 250 1.2 Eoff Eoff 0.8 1.0 Eon Switching Energ y (mJ) Etotal Switching Energy (mJ) 100 0.6 0.4 0.2 0 Eon Etotal 0.8 0.6 0.4 0.2 0.0 0 25 Rev0: July 2012 50 75 100 125 150 175 TJ (°C) Figure 18: Switching Loss vs. Tj (VGE=15V,VCE=400V,IC=15A,Rg=20Ω Ω) 200 www.aosmd.com 200 250 300 350 400 450 VCE (V) Figure 19: Switching Loss vs. VCE (Tj=150°C,V GE=15V,IC=15A,Rg=20Ω Ω) 500 Page 6 of 9 AOTF15B60D □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.E-03 1.8 15A 1.E-04 1.4 10A VSD (V) 5A 1.E-06 IF=1A VCE=400V 0.6 1.E-07 1.E-08 0.2 0 25 50 75 100 125 150 175 0 50 75 100 125 150 Temperature (°C ) Fig 21: Diode Forward voltage vs. Junction Temperature Temperature (°C ) Fig 20: Diode Reverse Leakage Current vs. Junction Temperature 175 400 16 1400 70 350 14 60 300 50 250 1000 Qrr 800 40 600 30 25°C 400 150°C 200 Irm 25°C 0 10 50 20 25 30 35 IF(A) Fig 22: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/µ µs) 1600 80 1400 70 150°C 1200 Qrr 40 600 30 Irm 25°C 100 200 5 10 0 15 20 25 30 35 IS (A) Fig 23: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/µ µs) 20 250 16 150°C 200 12 150 25°C 100 10 0 Trr 8 S 150°C 50 25°C 0 400 500 600 700 800 900 di/dt (A/µ µS) Fig 24: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V,VCE=400V,IF=15A) Rev0: July 2012 2 25°C 20 150°C 200 0 4 300 50 800 25°C S 60 1000 400 150°C 0 15 6 25°C 0 0 10 10 8 150 100 Trr (nS) 5 Trr 200 20 Irm(A) 0 12 150°C S 150°C Trr (nS) 80 Irm(A) Qrr (nC) 25 1600 1200 Qrr (nC) 13V 1 S ICE(S) (A) VCE=600V 1.E-05 300 www.aosmd.com 100 200 300 4 0 400 500 600 700 800 900 di/dt (A/µ µS) Fig 25: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V,VCE=400V,IF=15A) Page 7 of 9 AOTF15B60D □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for IGBT Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD 0.01 Ton 0.001 T Single Pulse 0.0001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 27: Normalized Maximum Transient Thermal Impedance for Diode Rev0: July 2012 www.aosmd.com Page 8 of 9 AOTF15B60D Rev0: July 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