AP02N60P-A-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
BVDSS
650V
▼ Fast Switching Characteristics
RDS(ON)
8Ω
▼ Simple Drive Requirement
ID
2A
▼ RoHS Compliant & Halogen-Free
G
D
TO-220
S
Description
D
The TO-220 package is widely preferred for all commercial-industrial
applications. The device is suited for DC-DC, DC-AC converters for
telecom, industrial and consumer environment.
G
S
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
+30
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
2
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
1.26
A
6
A
39
W
0.31
W/℃
64
mJ
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.2
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data & specifications subject to change without notice
1
201305093
AP02N60P-A-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGS=0V, ID=250uA
Min.
Typ.
Max. Units
650
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.6
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=0.6A
-
-
8
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=1A
-
0.2
-
S
IDSS
Drain-Source Leakage Current
VDS=600V, VGS=0V
-
-
25
uA
Drain-Source Leakage Current (T j=125 C) VDS=480V, VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
ID=2A
-
14
20
nC
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
8.5
-
nC
3
td(on)
Turn-on Delay Time
VDD=300V
-
9.5
-
ns
tr
Rise Time
ID=2A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
21
-
ns
tf
Fall Time
RD=150Ω
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
155
240
pF
Coss
Output Capacitance
VDS=25V
-
27
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
14
-
pF
Min.
Typ.
-
-
2
A
-
-
6
A
-
-
1.5
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.5V
Continuous Source Current ( Body Diode )
1
Pulsed Source Current ( Body Diode )
Forward On Voltage
3
Tj=25℃, IS=2A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=50mH , RG=25Ω , IAS=1.6A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP02N60P-A-HF
0.9
1.5
10V
6.0V
5.5V
ID , Drain Current (A)
o
1
5.0V
0.5
10V
6.0V
5.5V
T C =150 C
ID , Drain Current (A)
o
T C =25 C
0.6
5.0V
0.3
V G = 4.5 V
V G = 4.5 V
0
0
0
5
10
15
20
0
V DS , Drain-to-Source Voltage (V)
5
10
15
20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
I D =0.6A
V G =10V
Normalized RDS(ON)
Normalized BVDSS (V)
1.1
1
2
1
0.9
0
0.8
-50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( o C )
o
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
100
5
4
T j = 150 o C
VGS(th) (V)
IS (A)
10
o
T j = 25 C
3
1
2
1
0.1
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP02N60P-A-HF
f=1.0MHz
1000
I D =2A
12
V DS =320V
V DS =400V
V DS =480V
8
C (pF)
VGS , Gate to Source Voltage (V)
16
C iss
100
4
C oss
C rss
0
10
0
4
8
12
16
20
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
10
1
ID (A)
1ms
10ms
100ms
1s
DC
0.1
T c =25 o C
Single Pulse
0.01
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100us
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4