A-POWER AP07N70CI-H

AP07N70CI-H
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Rated
D
▼ Fast Switching
▼ Simple Drive Requirement
BVDSS
700V
RDS(ON)
1.4Ω
ID
G
7A
S
Description
AP07N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. The
TO-220CFM type provide high blocking voltage to overcome voltage
surge and sag in the toughest power system with the best combination of
fast switching, ruggedized design and cost-effectiveness.
G
D
S
TO-220CFM(I)
The TO-220CFM package is widely preferred for all commercialindustrial applications. The device is suited for switch mode power
supplies, DC-AC converters and high current high speed switching
circuits.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
700
V
VGS
Gate-Source Voltage
+ 30
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
7
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
4.4
A
1
IDM
Pulsed Drain Current
18
A
[email protected]=25℃
Total Power Dissipation
37
W
0.3
W/℃
140
mJ
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
7
A
EAR
Repetitive Avalanche Energy
7
mJ
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data & specifications subject to change without notice
1
200903183
AP07N70CI-H
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
700
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.6
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance3
VGS=10V, ID=3.5A
-
-
1.4
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=50V, ID=3.5A
-
4.5
-
S
IDSS
Drain-Source Leakage Current
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=125 C) VDS=480V, VGS=0V
-
-
500
uA
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
ID=7A
-
32
-
nC
VGS=0V, ID=1mA
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
8.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
9
-
nC
VDD=300V
-
17
-
ns
3
td(on)
Turn-on Delay Time
tr
Rise Time
ID=7A
-
15
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
35
-
ns
tf
Fall Time
RD=43Ω
-
18
-
ns
Ciss
Input Capacitance
VGS=0V
-
2075
-
pF
Coss
Output Capacitance
VDS=25V
-
120
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
8
-
pF
Min.
Typ.
-
-
7
A
-
-
18
A
-
-
1.5
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.5V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
3
Forward On Voltage
1
Tj=25℃, IS=7A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by Maximum junction temperature.
2.Starting Tj=25oC , VDD=50V , L=5mH , RG=25Ω , IAS=7A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP07N70CI-H
9
12
10V
6.0V
5.5V
10V
6.0V
5.5V
5.0V
o
T C =150 C
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 o C
8
5.0V
4
6
3
V G =4.0V
V G =4.0V
0
0
0
5
10
15
20
25
0
10
V DS , Drain-to-Source Voltage (V)
20
30
40
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
Normalized RDS(ON)
Normalized BVDSS (V)
I D =3.5A
V G =10V
1.1
1.0
2
1
0.9
0
0.8
-50
0
50
100
-50
150
o
50
100
150
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
6
10
4
T j = 150 o C
VGS(th) (V)
100
IS (A)
0
o
T j , Junction Temperature ( C)
T j = 25 o C
2
1
0
0.1
0
0.2
0.4
0.6
0.8
1
V SD ,Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP07N70CI-H
f=1.0MHz
16
10000
C iss
12
V DS =320V
V DS =400V
V DS =480V
C (pF)
VGS , Gate to Source Voltage (V)
I D =7A
8
C oss
100
4
C rss
1
0
0
10
20
30
40
1
50
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthjc)
DUTY=0.5
10
ID(A)
100us
1ms
1
10ms
100ms
0.1
1s
DC
T c =25 ℃
Single Pulse
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.001
0.01
1
10
100
1000
10000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4