A-POWER AP09N90CW-HF

AP09N90CW-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Minimize On-resistance
▼ Fast Switching
▼ Simple Drive Requirement
G
▼ RoHS Compliant & Halogen-Free
BVDSS
900V
RDS(ON)
1.4Ω
ID
7.6A
S
Description
AP09N90C provides minimize on-state resistance , superior switching
performance and high efficiency switching power supply applications.
TO-3P package is preferred for commercial-industrial applications and
provides greater distance between pins to meet the requirements of
most safety specifications.
G
TO-3P
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
900
V
VGS
Gate-Source Voltage
+30
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
7.6
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
4.8
A
1
IDM
Pulsed Drain Current
25
A
[email protected]=25℃
Total Power Dissipation
208
W
1.6
W/℃
120
mJ
6
A
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
Unit
0.6
℃/W
40
℃/W
1
200912163
AP09N90CW-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
900
-
-
V
-
0.74
-
V/℃
VGS=10V, ID=3.6A
-
1.25
1.4
Ω
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
VGS=0V, ID=1mA
3
Max. Units
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=3.6A
-
3.6
-
S
IDSS
Drain-Source Leakage Current
VDS=900V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=125oC) VDS=720V, VGS=0V
-
-
500
uA
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
ID=7.2A
-
50.7
80
nC
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=540V
-
12
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
16
-
nC
VDD=450V
-
20
-
ns
3
td(on)
Turn-on Delay Time
tr
Rise Time
ID=7.2A
-
16
-
ns
td(off)
Turn-off Delay Time
RG=6.8Ω,VGS=10V
-
65
-
ns
tf
Fall Time
RD=62.5Ω
-
27
-
ns
Ciss
Input Capacitance
VGS=0V
-
3097
5000
pF
Coss
Output Capacitance
VDS=15V
-
516
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
19
-
pF
Min.
Typ.
IS=7.2A, VGS=0V
-
-
1.5
A
Source-Drain Diode
Symbol
VSD
Parameter
3
Forward On Voltage
3
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=7.2A, VGS=0V,
-
673
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
9.6
-
µC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=6.8mH , RG=25Ω , IAS=6A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP09N90CW-HF
5
10
o
T C =150 C
6
4.5V
4
2
10V
7.0V
5.0V
4.5V
4
ID , Drain Current (A)
8
ID , Drain Current (A)
o
10V
7.0V
5.0V
T C =25 C
3
2
V G =4.0V
1
V G =4.0V
0
0
0
2
4
6
8
10
12
14
16
18
0
V DS , Drain-to-Source Voltage (V)
2
4
6
8
10
12
14
16
18
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
1.2
I D =3.6A
2.5
Normalized RDS(ON)
Normalized BVDSS (V)
V G =10V
1.1
1
2.0
1.5
1.0
0.9
0.5
0.0
0.8
-50
0
50
100
-50
150
Fig 3. Normalized BVDSS v.s. Junction
10
3
VGS(th) (V)
4
IS (A)
50
100
150
Fig 4. Normalized On-Resistance
100
T j = 150 o C
0
T j , Junction Temperature ( o C)
Junction Temperature ( o C)
T j = 25 o C
2
1
1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP09N90CW-HF
15
f=1.0MHz
10000
12
Ciss
V DS =180V
V DS =360V
V DS =540V
9
1000
C (pF)
VGS , Gate to Source Voltage (V)
I D =7.2A
Coss
6
100
3
Crss
10
0
0
20
40
60
1
80
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
10
ID (A)
100us
1ms
10ms
1
100ms
o
T c =25 C
Single Pulse
DC
DUTY=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
1000
10000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4