A-POWER AP2765I-A-HF

AP2765I-A-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
BVDSS
650V
RDS(ON)
0.85Ω
ID
▼ RoHS Compliant & Halogen-Free
8A
G
S
Description
AP2765 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.
TO-220CFM type provide high blocking voltage to overcome voltage
surge and sag in the toughest power system with the best combination
of fast switching,ruggedized design and cost-effectiveness.
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
+30
V
[email protected]=25℃
Continuous Drain Current, V GS @ 10V
8
A
[email protected]=100℃
Continuous Drain Current, V GS @ 10V
4.7
A
20
A
36.7
W
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data & specifications subject to change without notice
1
201003031
AP2765I-A-HF
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
650
-
-
V
VGS=10V, ID=4A
-
-
0.85
Ω
VGS=0V, ID=250uA
2
Max. Units
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=4A
-
7
-
S
IDSS
Drain-Source Leakage Current
VDS=480V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
ID=3.5A
-
54
86
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
10
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
23
-
nC
2
td(on)
Turn-on Delay Time
VDD=300V
-
14
-
ns
tr
Rise Time
ID=3.5A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
53
-
ns
tf
Fall Time
VGS=10V
-
14
-
ns
Ciss
Input Capacitance
VGS=0V
-
2130 3400
pF
Coss
Output Capacitance
VDS=25V
-
180
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
12
-
pF
Min.
Typ.
IS=4A, VGS=0V
-
-
1.5
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=3.5A, VGS=0V,
-
400
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
5.5
-
µC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2765I-A-HF
20
12
ID , Drain Current (A)
16
12
8
V GS =5.0V
10V
8.0V
7.0V
6.0V
V GS =5.0V
T C =150 o C
10
ID , Drain Current (A)
10V
8.0V
7.0V
6.0V
o
T C =25 C
8
6
4
4
2
0
0
0
8
16
24
32
0
8
V DS , Drain-to-Source Voltage (V)
16
24
32
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
Normalized RDS(ON)
Normalized BVDSS (V)
I D =4A
V G =10V
1.1
1
2
1
4.3
0.9
0
0.8
-50
0
50
100
-50
150
o
0
50
100
150
o
T j , Junction Temperature ( C)
T j , Junction Temperature ( C )
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.4
8
Normalized VGS(th) (V)
1.2
IS (A)
6
T j = 150 o C
4
T j = 25 o C
1
0.8
2
0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2765I-A-HF
12
f=1.0MHz
4000
3000
8
C (pF)
VGS , Gate to Source Voltage (V)
I D =3.5A
10
V DS =480V
C iss
2000
6
4
1000
2
C oss
C rss
0
0
0
20
40
60
1
80
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Operation in this area
limited by RDS(ON)
100us
ID (A)
10
1ms
1
10ms
100ms
1s
DC
0.1
o
T c =25 C
Single Pulse
0.01
Normalized Thermal Response (Rthjc)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
4.3
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off)
tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4