AP09N50I
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
500V
RDS(ON)
0.75Ω
ID
G
9A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
G
D
TO-220CFM(I)
S
The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage
+30
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
9
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
5.6
A
36
A
36.8
W
18
mJ
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
2
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
3.4
℃/W
65
℃/W
1
201107223
AP09N50I
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
500
-
-
V
RDS(ON)
Static Drain-Source On-Resistance3
VGS=10V, ID=4.5A
-
-
0.75
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
5.1
-
S
IDSS
Drain-Source Leakage Current
VDS=400V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
ID=6A
-
32
51
nC
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=400V
-
7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
14
-
nC
VDD=250V
-
35
-
ns
3
td(on)
Turn-on Delay Time
tr
Rise Time
ID=6A
-
45
-
ns
td(off)
Turn-off Delay Time
RG=50Ω,VGS=10V
-
164
-
ns
tf
Fall Time
RD=42Ω
-
48
-
ns
Ciss
Input Capacitance
VGS=0V
-
1370 2200
pF
Coss
Output Capacitance
VDS=25V
-
125
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
7
-
pF
Min.
Typ.
IS=6A, VGS=0V
-
-
1.5
V
IS=6A, VGS=0V
-
340
-
ns
dI/dt=100A/µs
-
4.4
-
uC
Source-Drain Diode
Symbol
VSD
Parameter
3
Forward On Voltage
3
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP09N50I
20
12
o
T C =150 C
10 V
9.0 V
7.0 V
10
ID , Drain Current (A)
16
ID , Drain Current (A)
10V
9.0 V
7.0 V
6.0V
o
T C =25 C
6.0V
12
8
8
6
V G = 5.0V
4
V G = 5.0 V
4
2
0
0
0
10
20
30
0
4
12
16
20
24
28
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.8
I D =6A
V G =10V
2.4
1.1
Normalized RDS(ON)
Normalized BVDSS (V)
8
V DS , Drain-to-Source Voltage (V)
1
2.0
1.6
1.2
0.9
0.8
0.8
0.4
-50
0
50
100
150
-50
o
0
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Temperature
1.5
8
1.3
Normalized VGS(th) (V)
10
T j =25 o C
T j =150 o C
IS(A)
6
4
1.1
0.9
0.7
2
0.5
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP09N50I
f=1.0MHz
10000
12
10
C iss
1000
8
C (pF)
VGS , Gate to Source Voltage (V)
I D =6A
V DS =400V
6
C oss
100
4
10
C rss
2
1
0
0
10
20
30
1
40
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Operation in this area
limited by RDS(ON)
100us
ID (A)
10
1ms
1
10ms
100ms
1s
DC
0.1
o
T C =25 C
Single Pulse
0.01
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
100
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
Single Pulse
0.01
1
10
100
1000
0.0001
0.001
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
V DS ,Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4