A-POWER AP4933GM-HF

AP4933GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching Characteristic
BVDSS
RDS(ON)
ID
D2
D2
D1
D1
▼ RoHS Compliant & Halogen-Free
SO-8
S1
-30V
90mΩ
-3.8A
G2
S2
G1
Description
AP4933 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide range
of power applications.
D2
D1
G2
G1
S2
S1
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
-30
V
+20
V
Continuous Drain Current
3
-3.8
A
Continuous Drain Current
3
-3
A
-16
A
2
W
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Value
Unit
Maximum Thermal Resistance, Junction-ambient3
62.5
℃/W
Data and specifications subject to change without notice
1
201205311
AP4933GM-HF
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
-30
-
-
V
VGS=-10V, ID=-3A
-
70
90
mΩ
VGS=-4.5V, ID=-2A
-
110
145
mΩ
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-1.7
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-3A
-
6
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-3A
-
4.5
7.2
nC
Qgs
Gate-Source Charge
VDS=-15V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
7
-
ns
tr
Rise Time
ID=-1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
16
-
ns
tf
Fall Time
VGS=-10V
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
345
550
pF
Coss
Output Capacitance
VDS=-15V
-
75
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Min.
Typ.
IS=-1.7A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=-3A, VGS=0V,
-
17
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
9
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4933GM-HF
12
20
T A =25 o C
-10V
-7.0V
-6.0V
-5.0V
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
2
4
10
-ID , Drain Current (A)
-ID , Drain Current (A)
16
T A = 150 o C
12
V G = -4.0V
8
8
6
4
4
2
0
0
0
1
2
3
4
5
6
0
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3
5
Fig 2. Typical Output Characteristics
140
2.0
I D = -3A
V G = -10V
I D = -2 A
o
T A =25 C
120
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
1
-V DS , Drain-to-Source Voltage (V)
100
80
1.2
0.8
60
0.4
2
4
6
8
10
-50
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
2.0
I D =-250uA
1.6
T j =150 o C
2
Normalized -VGS(th)
-IS(A)
3
T j =25 o C
1.2
0.8
1
0.4
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4933GM-HF
f=1.0MHz
500
10
V DS = -15 V
400
8
C (pF)
-VGS , Gate to Source Voltage (V)
I D = -3 A
6
C iss
300
4
200
2
100
C oss
C rss
0
0
0
2
4
6
8
10
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
10
Operation in this area
limited by RDS(ON)
100us
1ms
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
0.01
Normalized Thermal Response (Rthja)
100
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthia=135 ℃/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
5
VG
-ID , Drain Current (A)
4
QG
-4.5V
3
QGS
QGD
2
1
Charge
Q
0
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 11. Maximum Continuous Drain
Current v.s. Ambient Temperature
Fig 12. Gate Charge Waveform
4