A-POWER AP9579GM-HF

AP9579GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
D
▼ Lower Gate Charge
D
D
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
SO-8
S
S
G
BVDSS
-60V
RDS(ON)
25mΩ
ID
-7.3A
S
D
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
G
S
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
-60
V
+20
V
3
-7.3
A
3
-5.8
A
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
-30
A
[email protected]=25℃
Total Power Dissipation
2.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
50
℃/W
1
201110261
AP9579GM-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-60
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-7A
-
18.2
25
mΩ
VGS=-4.5V, ID=-5A
-
22.5
30
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-1.5
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-7A
-
27
-
S
IDSS
Drain-Source Leakage Current
VDS=-48V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-7A
-
40
64
nC
Qgs
Gate-Source Charge
VDS=-30V
-
8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
18
-
nC
td(on)
Turn-on Delay Time
VDS=-30V
-
12
-
ns
tr
Rise Time
ID=-1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
77
-
ns
tf
Fall Time
VGS=-10V
-
37
-
ns
Ciss
Input Capacitance
VGS=0V
-
3700 5920
pF
Coss
Output Capacitance
VDS=-15V
-
450
-
pF
Crss
Reverse Transfer Capacitance
f=1MHz
-
300
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.5
5
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-1.9A, VGS=0V
-
-
-1.3
V
trr
Reverse Recovery Time
IS=-7A, VGS=0V,
-
37
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
50
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9579GM-HF
40
40
30
- 10 V
- 7.0 V
- 6.0 V
- 5.0 V
V G = - 4.0 V
o
- 10 V
- 7.0 V
- 6.0 V
- 5.0 V
V G = - 4.0 V
T A = 150 C
-ID , Drain Current (A)
-ID , Drain Current (A)
T A = 25 o C
20
10
30
20
10
0
0
0
1
2
3
4
0
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
24
I D = -7 A
V G = -10V
I D = -5 A
T A =25 ℃
23
Normalized RDS(ON)
RDS(ON) (mΩ)
2.0
22
21
1.6
1.2
20
0.8
19
0.4
18
2
4
6
8
-50
10
0
50
100
150
o
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
2
Normalized -VGS(th) (V)
I D = -250uA
-IS(A)
6
4
T j =150 o C
T j =25 o C
1.6
1.2
0.8
2
0.4
0
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9579GM-HF
10
f=1.0MHz
5000
8
4000
C iss
6
C (pF)
-VGS , Gate to Source Voltage (V)
I D = -7A
V DS = -30V
3000
4
2000
2
1000
C oss
C rss
0
0
0
20
40
60
1
80
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
100us
Operation in this area
limited by RDS(ON)
10
-ID (A)
1ms
10ms
1
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=125 oC/W
Single Pulse
0.001
0.01
0.01
0.1
1
10
100
0.0001
1000
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
8
40
-ID , Drain Current (A)
-ID , Drain Current (A)
V DS = -5V
30
20
6
4
2
10
T j =150 o C
o
T j =25 C
o
T j = -40 C
0
0
0
1
2
3
4
5
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
4