A-POWER AP5322GM-HF

AP5322GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Lower Gate Charge
D2
D2
▼ Simple Drive Requirement
D1
D1
▼ Fast Switching Characteristic
G2
BVDSS
100V
RDS(ON)
250mΩ
ID
1.9A
S2
▼ Halogen Free & RoHS Compliant
SO-8
G1
S1
Description
D2
D1
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
100
V
+20
V
3
1.9
A
3
1.5
A
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
8
A
[email protected]=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
201201101
AP5322GM-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
100
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=1.9A
-
190
250
mΩ
VGS=4.5V, ID=1A
-
300
500
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
1.6
3
V
gfs
Forward Transconductance
VDS=10V, ID=1.9A
-
2.4
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=1.9A
-
3.1
5
nC
Qgs
Gate-Source Charge
VDS=50V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
1.8
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
5
-
ns
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
12
-
ns
tf
Fall Time
VGS=10V
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
200
320
pF
Coss
Output Capacitance
VDS=15V
-
32
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
25
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1.5A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=1.9A, VGS=0V
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
40
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP5322GM-HF
10
6
o
5.0V
6
10V
7.0V
6.0V
5.0V
5
ID , Drain Current (A)
8
ID , Drain Current (A)
T A = 150 o C
10V
7.0V
6.0V
T A = 25 C
4
V G = 4.0V
4
3
V G = 4.0V
2
2
1
0
0
0
2
4
6
8
10
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
420
2.4
I D = 1.9 A
V G =10V
ID=1A
T A =25 ℃
380
Normalized RDS(ON)
RDS(ON) (mΩ)
2.0
340
300
1.6
1.2
260
0.8
220
180
0.4
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
2
I D =250uA
1.6
Normalized VGS(th) (V)
IS(A)
1.6
1.2
T j =150 o C
0.8
T j =25 o C
0.4
1.2
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP5322GM-HF
10
f=1.0MHz
400
VGS , Gate to Source Voltage (V)
I D = 1.9 A
V DS =50V
8
C (pF)
300
6
C iss
200
4
100
2
C oss
C rss
0
0
0
1
2
3
4
1
5
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
ID (A)
Operation in this
area limited by
RDS(ON)
100us
1
1ms
10ms
0.1
100ms
1s
T A =25 o C
Single Pulse
0.01
0.01
0.1
1
10
100
DC
0.2
0.1
PDM
0.1
t
0.05
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.02
Rthja = 135℃/W
0.01
Single Pulse
0.01
1000
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
2
VG
1.6
ID , Drain Current (A)
QG
4.5V
1.2
QGS
QGD
0.8
0.4
Charge
Q
0
25
50
75
100
o
125
T A , Ambient Temperature ( C )
150
Fig 11. Maximum Continuous Drain Current
v.s. Ambient Temperature
Fig 12. Gate Charge Waveform
4