COMSET 2N4901_12

2N4901 – 2N4902 – 2N4903
PNP SILICON TRANSISTORS, EPITAXIAL BASE
The 2N4901, 2N4902, 2N4903 are mounted in Jedec TO-66 metal case.
They are intended for general–purpose switching and power amplifier applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
Collector to Base Voltage
VCEO
#Collector-Emitter Voltage
VCER
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
VCEX
Collector-Base Voltage
IC
Collector Current – Continuous
Collector
tp=5 ms
Current – Peak
Base Current – Continuous
Power Dissipation
Junction Temperature
Storage Temperature
ICM
IB
PTOT
TJ
TSTG
VBE=1.5 V
Value
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
Unit
-40
-60
-80
-40
-60
-80
-40
-60
-80
-5.0
-40
-60
-80
-5
A
-10
A
-1
87.5
200
-65 to +200
A
W
°C
°C
Value
Unit
2
°C/W
47.3
°C/W
V
V
V
V
V
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJC
Thermal Resistance, Junction to Case
RthJA
Junction to Free Air Thermal Resistance
17/10/2012
COMSET SEMICONDUCTORS
13
2N4901 – 2N4902 – 2N4903
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(BR)
ICBO
ICEX
IEBO
hFE
VCE(SAT)
VBE
VBE(SAT)
Hfe
fT
Is/b
Ratings
Collector-Emitter
Breakdown Voltage)
Test Condition(s)
IC=200 mAdc, IB=0
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
VCE=-40 V, IE=0
VCE=-60 V, IE=0
VCE=-80 V, IE=0
VCE=-40 V, VEB=1.5 V
VCE=-40 V, VEB=1.5 V 2N4901
TCASE=150°C
VCE=-60 V, VEB=1.5 V
Collector Cutoff Current VCE=-60 V, VEB=1.5 V 2N4902
TCASE=150°C
VCE=-80 V, VEB=1.5 V
VCE=-80 V, VEB=1.5 V 2N4903
TCASE=150°C
2N4901
Emitter Cutoff Current
VBE=5.0 V, IC=0
2N4902
2N4903
2N4901
VCE=-2.0 V, IC=-1.0 A 2N4902
2N4903
DC Current Gain (*)
2N4901
VCE=-2.0 V, IC=-5.0 A 2N4902
2N4903
2N4901
2N4902
IC=-1.0 A, IB=-0.1 A
2N4903
Collector-Emitter
saturation Voltage (*)
2N4901
IC=-5.0 A, IB=-1.0 A
2N4902
2N4903
2N4901
Base-Emitter Voltage (*) IC=-1.0 A, VCE=-2.0 V 2N4902
2N4903
2N4901
Base-Emitter Saturation
2N4902
IC=-5.0 A, IB=-1.0 A
Voltage (*)
2N4903
Forward Current
VCE=-10 V, IC=-0.5 A
f =1MHz
Transfer Ratio (*)
Transition Frequency
VCE=-10 V, IC=-1.0 A, f=1.0 kHz
Second Breakdown
t=1 s, VCE=40 V, TCASE=100°C
Collector Current
Collector-Base cut-off
Current
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
17/10/2012
COMSET SEMICONDUCTORS
Min
Typ
Max
Unit
V
-40
-60
-80
-
-
-
-
0.1
0.1
0.1
-0.1
-
-
-2.0
-
-
-0.1
-
-
-2.0
-
-
-0.1
-
-
-2.0
-
-
-1.0
20
-
80
mA
mA
mA
V
7
-
-
-
-
-0.4
V
-
-
-1.5
-
-
-1.2
V
-
1.7
-
V
20
-
-
V
4
-
-
MHz
1.25
-
-
A
23
2N4901 – 2N4902 – 2N4903
MECHANICAL DATA CASE TO-3
DIMENSIONS
(mm)
A
B
C
D
F
G
N
P
R
U
V
min
max
11
0.97
1.5
8.32
19
10.70
16.50
25
4
38.50
30
13.10
1.15
1.65
8.92
20
11.1
17.20
26
4.09
39.30
30.30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
17/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
33