2N4901 – 2N4902 – 2N4903 PNP SILICON TRANSISTORS, EPITAXIAL BASE The 2N4901, 2N4902, 2N4903 are mounted in Jedec TO-66 metal case. They are intended for general–purpose switching and power amplifier applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO Collector to Base Voltage VCEO #Collector-Emitter Voltage VCER Collector-Emitter Voltage VEBO Emitter-Base Voltage VCEX Collector-Base Voltage IC Collector Current – Continuous Collector tp=5 ms Current – Peak Base Current – Continuous Power Dissipation Junction Temperature Storage Temperature ICM IB PTOT TJ TSTG VBE=1.5 V Value 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 Unit -40 -60 -80 -40 -60 -80 -40 -60 -80 -5.0 -40 -60 -80 -5 A -10 A -1 87.5 200 -65 to +200 A W °C °C Value Unit 2 °C/W 47.3 °C/W V V V V V THERMAL CHARACTERISTICS Symbol Ratings RthJC Thermal Resistance, Junction to Case RthJA Junction to Free Air Thermal Resistance 17/10/2012 COMSET SEMICONDUCTORS 13 2N4901 – 2N4902 – 2N4903 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(BR) ICBO ICEX IEBO hFE VCE(SAT) VBE VBE(SAT) Hfe fT Is/b Ratings Collector-Emitter Breakdown Voltage) Test Condition(s) IC=200 mAdc, IB=0 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 VCE=-40 V, IE=0 VCE=-60 V, IE=0 VCE=-80 V, IE=0 VCE=-40 V, VEB=1.5 V VCE=-40 V, VEB=1.5 V 2N4901 TCASE=150°C VCE=-60 V, VEB=1.5 V Collector Cutoff Current VCE=-60 V, VEB=1.5 V 2N4902 TCASE=150°C VCE=-80 V, VEB=1.5 V VCE=-80 V, VEB=1.5 V 2N4903 TCASE=150°C 2N4901 Emitter Cutoff Current VBE=5.0 V, IC=0 2N4902 2N4903 2N4901 VCE=-2.0 V, IC=-1.0 A 2N4902 2N4903 DC Current Gain (*) 2N4901 VCE=-2.0 V, IC=-5.0 A 2N4902 2N4903 2N4901 2N4902 IC=-1.0 A, IB=-0.1 A 2N4903 Collector-Emitter saturation Voltage (*) 2N4901 IC=-5.0 A, IB=-1.0 A 2N4902 2N4903 2N4901 Base-Emitter Voltage (*) IC=-1.0 A, VCE=-2.0 V 2N4902 2N4903 2N4901 Base-Emitter Saturation 2N4902 IC=-5.0 A, IB=-1.0 A Voltage (*) 2N4903 Forward Current VCE=-10 V, IC=-0.5 A f =1MHz Transfer Ratio (*) Transition Frequency VCE=-10 V, IC=-1.0 A, f=1.0 kHz Second Breakdown t=1 s, VCE=40 V, TCASE=100°C Collector Current Collector-Base cut-off Current (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 17/10/2012 COMSET SEMICONDUCTORS Min Typ Max Unit V -40 -60 -80 - - - - 0.1 0.1 0.1 -0.1 - - -2.0 - - -0.1 - - -2.0 - - -0.1 - - -2.0 - - -1.0 20 - 80 mA mA mA V 7 - - - - -0.4 V - - -1.5 - - -1.2 V - 1.7 - V 20 - - V 4 - - MHz 1.25 - - A 23 2N4901 – 2N4902 – 2N4903 MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) A B C D F G N P R U V min max 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 Pin 1 : Pin 2 : Case : Base Emitter Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 17/10/2012 [email protected] COMSET SEMICONDUCTORS 33