COMSET BDY55_12

BDY55 – BDY56
NPN SILICON TRANSISTORS, DIFFUSED MESA
The BDY55 and BDY56 are mounted in TO-3 metal package.
LF Large Signal Power Amplification
High Current Fast Switching.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
IC
IB
PTOT
TJ
TS
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
BDY55
BDY56
BDY55
BDY56
@ TC = 25°
60
120
100
150
7
15
7
117
200
-65 to +200
Unit
V
V
V
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
23/10/2012
COMSET SEMICONDUCTORS
Value
Unit
1.5
°C/W
1|3
BDY55 – BDY56
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(SUS)
ICEO
IEBO
ICEX
VCE(SAT)
Ratings
Test Condition(s)
Collector-Emitter Breakdown
Voltage (*)
Collector-Emitter Cutoff
Current
IC = 200 mA
IB = 0
VCE = 30 V
VCE = 60 V
Emitter-Base Cutoff Current
VEB = 7 V
Collector-Emitter Cutoff
Current
Collector-Emitter saturation
Voltage (*)
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
VBE
Base-Emitter Voltage (*)
HFE
Static Forward Current
transfer ratio (*)
fT
Transition Frequency
t d + tr
Turn-on time
t s + tf
Turn-off time
VCE = 100 V
VBE = -1.5 V
VCE = 100 V
VBE = -1.5 V
TCASE = 150°C
VCE = 150 V
VBE = -1.5 V
VCE = 150 V
VBE = -1.5 V
TCASE = 150°C
IC = 4.0 A
IB = 0.4 A
IC = 10 A
IB = 3.3 A
IC = 10 A
IB = 3.3 A
IC = 4.0 A
VCE = 4.0 V
VCE = 4 V
IC = 4 A
VCE = 4 V
IC =10 A
VCE = 4.0 V
IC = 1.0 A,
f = 10 MHz
IC = 5 A
IB = 1 A
IC = 5 A
IB1 = 1 A
IB2 = -0.5 A
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
Min
Typ
Max
60
120
-
-
0.7
0.5
5
3
-
-
5
-
-
30
Unit
V
mA
mA
BDY55
mA
-
-
3
-
-
30
-
-
1.1
-
-
2.5
-
-
2.5
-
-
1.8
20
-
70
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
V
V
V
10
10
-
-
MHz
-
-
0.5
µs
-
-
2
µs
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
23/10/2012
COMSET SEMICONDUCTORS
2|3
BDY55 – BDY56
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
A
B
C
D
F
G
N
P
R
U
V
min
max
11
0.97
1.5
8.32
19
10.70
16.50
25
4
38.50
30
13.10
1.15
1.65
8.92
20
11.1
17.20
26
4.09
39.30
30.30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
23/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
3|3