BDY55 – BDY56 NPN SILICON TRANSISTORS, DIFFUSED MESA The BDY55 and BDY56 are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Switching. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO IC IB PTOT TJ TS Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Value BDY55 BDY56 BDY55 BDY56 @ TC = 25° 60 120 100 150 7 15 7 117 200 -65 to +200 Unit V V V A A W °C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case 23/10/2012 COMSET SEMICONDUCTORS Value Unit 1.5 °C/W 1|3 BDY55 – BDY56 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) ICEO IEBO ICEX VCE(SAT) Ratings Test Condition(s) Collector-Emitter Breakdown Voltage (*) Collector-Emitter Cutoff Current IC = 200 mA IB = 0 VCE = 30 V VCE = 60 V Emitter-Base Cutoff Current VEB = 7 V Collector-Emitter Cutoff Current Collector-Emitter saturation Voltage (*) VCE(SAT) Collector-Emitter saturation Voltage (*) VBE Base-Emitter Voltage (*) HFE Static Forward Current transfer ratio (*) fT Transition Frequency t d + tr Turn-on time t s + tf Turn-off time VCE = 100 V VBE = -1.5 V VCE = 100 V VBE = -1.5 V TCASE = 150°C VCE = 150 V VBE = -1.5 V VCE = 150 V VBE = -1.5 V TCASE = 150°C IC = 4.0 A IB = 0.4 A IC = 10 A IB = 3.3 A IC = 10 A IB = 3.3 A IC = 4.0 A VCE = 4.0 V VCE = 4 V IC = 4 A VCE = 4 V IC =10 A VCE = 4.0 V IC = 1.0 A, f = 10 MHz IC = 5 A IB = 1 A IC = 5 A IB1 = 1 A IB2 = -0.5 A BDY55 BDY56 BDY55 BDY56 BDY55 BDY56 Min Typ Max 60 120 - - 0.7 0.5 5 3 - - 5 - - 30 Unit V mA mA BDY55 mA - - 3 - - 30 - - 1.1 - - 2.5 - - 2.5 - - 1.8 20 - 70 BDY56 BDY55 BDY56 BDY55 BDY56 BDY55 BDY56 BDY55 BDY56 BDY55 BDY56 BDY55 BDY56 BDY55 BDY56 BDY55 BDY56 BDY55 BDY56 V V V 10 10 - - MHz - - 0.5 µs - - 2 µs (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 23/10/2012 COMSET SEMICONDUCTORS 2|3 BDY55 – BDY56 MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) A B C D F G N P R U V min max 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 Pin 1 : Pin 2 : Case : Base Emitter Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 23/10/2012 [email protected] COMSET SEMICONDUCTORS 3|3