COMSET BUX12_12

NPN BUX12
HIGH CURRENT, HIGH SPEED , HIGH
POWER TRANSISTOR
The BUX12 is silicon multiepitaxial planar NPN transistors in Jedec TO-3.
They are intended for use in switching and linear appications in military and industrial
equipment.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
VCEX
IC
ICM
IB
Pt
TJ
TStg
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
IB = 0
IE = 0
IC = 0
VBE = -1.5V
tp = 10ms
@ TC = 25°
250
300
7.0
300
20
25
4
150
200
-65 to +200
V
V
V
V
A
A
A
W
°C
°C
Value
Unit
1.17
°C/W
THERMAL CHARACTERISTICS
Symbol
RthJC
Ratings
Thermal Resistance, Junction to Case
COMSET SEMICONDUCTORS
1/3
NPN BUX12
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(SUS)
VEB0(SUS)
ICEO
Ratings
Test Condition(s)
Collector-Emitter Sustaining Voltage
IC=200 mA
(*)
Emitter-Base Breakdown Voltage
IC=0A, IE=50 mA
(*)
VCE=200 V, IB=0A
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE
DC Current Gain (*)
VBE(SAT)
Collector-Emitter saturation
Voltage (*)
Base-Emitter saturation Voltage (*)
IS/B
Second breakdown collector current
ES/B
Clamped ES/B Collector current
fT
Transition frequency
ton
Turn-on time
ts
Storage time
tf
File time
VCE(SAT)
VCE= VCEX, VBE= -1.5V
VCE= VCEX, VBE= -1.5V
Tcase = 125°C
VEB=5.0 V, IC=0
IC=5 A, VCE=4.0 V
IC=10 A, VCE=4.0 V
IC=5 A, IB=0.5 A
IC=10 A, IB=1.25 A
IC=10 A, IB=1.25 A
VCE=30 V, ts = 1s
VCE=140 , ts = 1s
Vclamp=250 V, L=500 µH
VCE=15 V, IC=1 A
f=10 MHz
IC=10 A, IB=1.25 A
VCC=150 V
IC=10 A, VCC=150 V
IB1 = -IB2 =1.25 A
Min
Typ
Max
Unit
250
-
-
V
7
-
-
V
-
-
1.5
1.5
mA
-
-
6
20
10
5
0.15
10
0.22
0.5
1.23
-
1
60
1
1.5
1.5
-
mA
8
-
-
MHz
-
0.28
1
-
1.45
2
-
0.23
0.5
mA
V
A
A
µs
(*) Pulse Duration = 300 µs, Duty Cycle <= 2%
26/10/2012
COMSET SEMICONDUCTORS
3/3
NPN BUX12
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
A
B
C
D
F
G
N
P
R
U
V
min
max
11
0.97
1.5
8.32
19
10.70
16.50
25
4
38.50
30
13.10
1.15
1.65
8.92
20
11.1
17.20
26
4.09
39.30
30.30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
26/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
3/3