COMSET BDW84B

PNP BDW84 – BDW84A – BDW84B
BDW84C – BDW84D
PNP SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial-base PNP power monolithic Darlington transistor mounted in
Jedec TO-218 plastic package.
They are intended for use in power linear and switching applications.
The complementary are BDW83, BDW83A, BDW83B, BDW83C, BDW83D
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
IB = 0
VCBO
Collector- Emitter Voltage IE = 0
VEBO
IC
IB
Emitter-Base Voltage
Collector Current
Base Current
Pt
Total Power Dissipation
TJ
TStg
Junction Temperature
Storage Temperature
Value
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
IC = 0
25°C case temperatur
25°C free aire temperatur
Unit
-45
-60
-80
-100
-120
-45
-60
-80
-100
-120
-5
-15
-0.5
150
3.5
-65 to +150
-65 to +150
°C
°C
Value
Unit
0.83
35.7
°C/W
V
V
V
A
A
W
THERMAL CHARACTERISTICS
Symbol
RthJC
RthJA
Ratings
Junction to Case Thermal Resistance
Junction to Free Air Thermal Resistance
23/10/2012
COMSET SEMICONDUCTORS
1|3
PNP BDW84 – BDW84A – BDW84B
BDW84C – BDW84D
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(SUS)
ICEO
ICBO
Ratings
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
hFE
DC Current Gain (*)
VBE(on)
VEC
IC=30 mA
IB=0
Collector-Emitter
Sustaining Voltage (*)
IEBO
VCE(SAT)
Test Condition(s)
Collector-Emitter
saturation Voltage (*)
Base-Emitter Voltage (*)
Parallel Diode Forward
Voltage
ton
Turn-on time
toff
Turn-off time
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
IB=0, VCE=-30 V
IB=0, VCE=-30 V
IB=0, VCE=-40 V
IB=0, VCE=-50 V
IB=0, VCE=-60 V
IE= 0, VCB=-45 V
IE= 0, VCB=-60 V
IE= 0, VCB=-80 V
IE= 0, VCB=-100 V
IE= 0, VCB=-120 V
VCB=-45 V, IE= 0
BDW84
Tcase = 150°C
VCB=-60 V, IE= 0
BDW84A
Tcase = 150°C
VCB=-80 V, IE= 0
BDW84B
Tcase = 150°C
VCB=-100 V, IE= 0
BDW84C
Tcase = 150°C
VCB=-120 V, IE= 0
BDW84D
Tcase = 150°C
VEB=-5.0 V, IC=0
IC=-6 A , VCE=-3.0 V
IC=-15 A , VCE=-3.0 V
IC=-6 A , IB=-12 mA
IC=-15 A , IB=-150 mA
IC=-6 A , IB=-3 A
Min
Typ
Max
Unit
-45
-60
-80
-100
-120
-
-
V
-
-
-1
mA
-
-
-0.5
mA
-
-
-5
750
100
-
-
-2
20 K
-2.5
-4
-2.5
mA
IE =-15 A , IE= 0
-
-
-3.5
V
IC = -10 A,
IB1 =-IB2=-40 mA
RL=3Ω; VBE(off) = 4.2V
Duty Cycle≤2%
-
0.9
-
-
7
-
COMSET SEMICONDUCTORS
V
V
µs
(*) Pulse Duration = 300 µs, Duty Cycle <= 2%
23/10/2012
-
2|3
PNP BDW84 – BDW84A – BDW84B
BDW84C – BDW84D
MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
R
S
T
Pin 1 :
Pin 2 :
Pin 3 :
15.20
1.90
4.60
3.10
0.35
5.35
20.00
19.60
0.95
4.80
Max.
1600
2.10
5.00
3.30
9.60
2.00
0.55
1.40
5.55
20.20
1.25
2.00
3.00
4.00
4.00
1.80
5.20
Base
Collector
Emitter
The centre pin is in electrical
contact with the mounting tab.
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
23/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
3|3