DMA10P1600PZ Standard Rectifier VRRM = 2x 1600 V I FAV = 10 A VF = 1.21 V Phase leg Part number DMA10P1600PZ Backside: anode/cathode 1 4 3 Features / Advantages: Applications: Package: TO-263 (D2Pak-HV) ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● High creepage distance between terminals IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130108b DMA10P1600PZ Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 1700 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1600 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case VR = 1600 V TVJ = 25°C 10 µA TVJ = 150°C 0.2 mA TVJ = 25°C 1.26 V 1.53 V 1.21 V 10 A IF = 20 A IF = 10 A IF = 20 A TVJ = 150 °C TC = 150°C rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1.57 V T VJ = 175 °C 10 A TVJ = 175 °C 0.82 V d = 0.5 for power loss calculation only Ptot typ. VR = 1600 V IF = forward voltage drop min. 37 mΩ 1.5 K/W K/W 0.25 TC = 25°C 100 W t = 10 ms; (50 Hz), sine TVJ = 45°C 120 A t = 8,3 ms; (60 Hz), sine VR = 0 V 130 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 100 A t = 8,3 ms; (60 Hz), sine VR = 0 V 110 A t = 10 ms; (50 Hz), sine TVJ = 45°C 72 A²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 70 A²s TVJ = 150 °C 50 A²s 50 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 4 pF 20130108b DMA10P1600PZ Package Ratings TO-263 (D2Pak-HV) Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 25 Unit A -55 150 °C -55 175 °C Weight 1.5 FC 20 mounting force with clip d Spp/App d Spb/Apb D M A 10 P 1600 PZ IXYS yyww z Logo Date Code Assembly Line N 4.2 mm terminal to backside 4.9 mm Part number XXXXXXXXX Part No. 60 terminal to terminal creepage distance on surface | striking distance through air Product Marking g = = = = = = = Diode Standard Rectifier (up to 1800V) Current Rating [A] Phase leg Reverse Voltage [V] TO-263AB (D2Pak) (2HV) 000000 Assembly Code Ordering Standard Part Number DMA10P1600PZ Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Tape & Reel Quantity 800 Code No. 513688 T VJ = 175°C Rectifier V 0 max threshold voltage 0.82 R 0 max slope resistance * 34 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Marking on Product DMA10P1600PZ V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20130108b DMA10P1600PZ Outlines TO-263 (D2Pak-HV) Dim. Supplier Option A1 H D E c2 A D1 L1 W e1 4 A2 D2 3 L 1 c 2x e 2x b2 2x b E1 1 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 4 A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 W Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20130108b DMA10P1600PZ Rectifier 20 100 102 50 Hz, 80%VRRM VR = 0 V 15 TVJ = 45°C 80 IF TVJ = 45°C IFSM It [A] [A s] 2 10 [A] 2 TVJ = 150°C 60 5 TVJ = 150°C TVJ = 25°C TVJ = 125°C TVJ = 150°C 0 0.5 1.0 1.5 101 40 0.001 2.0 0.01 VF [V] 0.1 1 1 3 4 5 6 7 8 910 t [ms] 2 Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop per diode Fig. 3 I t versus time per diode 28 18 RthHA = 16 12 10 DC = 1 0.5 0.4 0.33 0.17 0.08 24 4 K/W 8 K/W 10 K/W 12 K/W 16 K/W 20 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 14 Ptot 2 t [s] 20 IF(AV)M 16 [A] [W] 8 12 6 8 4 4 2 0 0 0 2 4 6 8 10 12 0 50 IF(AV)M [A] 100 150 200 0 50 100 150 200 TC [°C] Tamb [°C] Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs. case temperature 1.6 1.2 Constants for ZthJC calculation: ZthJC 0.8 [K/W] 0.4 i Rthi (K/W) ti (s) 1 0.155 0.0005 2 0.332 0.0095 3 0.713 0.17 4 0.3 0.8 5 0.00001 0.00001 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130108b