AO4442 75V N-Channel MOSFET General Description The AO4442 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages from 4.5V to 25V. This device is suitable for use as a load switch or in PWM applications. Features VDS 75V ID (at VGS=10V) 3.1A RDS(ON) (at VGS=10V) < 130mΩ RDS(ON) (at VGS = 4.5V) < 165mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/5 Steady-State Steady-State A 3.1 W 2 TJ, TSTG Symbol t ≤ 10s V 20 PD TA=70°C ±25 2.5 IDM TA=25°C Power Dissipation B Units V 3.1 ID TA=70°C Maximum 75 RθJA RθJL -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W www.freescale.net.cn AO4442 75V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min ID=10mA, VGS=0V Typ 75 1 TJ=55°C 5 VDS=0V, VGS= ±25V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1 On state drain current VGS=10V, VDS=5V 20 VGS=10V, ID=3.1A nA 2.4 3 V 100 130 180 220 165 mΩ 1 V 3.5 A 350 pF A Static Drain-Source On-Resistance VGS=4.5V, ID=2A 120 gFS Forward Transconductance VDS=5V, ID=3.1A 8.2 VSD Diode Forward Voltage IS=1A,VGS=0V 0.79 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 303 VGS=0V, VDS=37.5V, f=1MHz 37 2.2 mΩ S pF 17 VGS=0V, VDS=0V, f=1MHz µA 100 RDS(ON) TJ=125°C Units V VDS=60V, VGS=0V ID(ON) Coss Max pF 3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 5.2 6.5 nC Qg(4.5V) Total Gate Charge 2.46 3.5 nC Qgs Gate Source Charge VGS=10V, VDS=37.5V, ID=3.1A 1 nC Qgd Gate Drain Charge 1.34 nC tD(on) Turn-On DelayTime 4.5 ns tr Turn-On Rise Time 2.3 ns tD(off) Turn-Off DelayTime 15.6 ns tf Turn-Off Fall Time 1.9 ns VGS=10V, VDS=37.5V, RL=12Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=3.1A, dI/dt=100A/µs 22 Qrr Body Diode Reverse Recovery Charge IF=3.1A, dI/dt=100A/µs 22 30 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. 2/5 www.freescale.net.cn AO4442 75V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 15 5V 10V VDS=5V 4.5V 12 12 6V 9 ID(A) ID (A) 9 4V 6 6 125°C 3 3 25°C VGS=3.5V 0 0 0 1 2 3 4 0 5 1 2.2 200 2 Normalized On-Resistance 220 RDS(ON) (mΩ ) 180 VGS=4.5V 140 120 100 VGS=10V 80 0 2 4 4 5 6 VGS=10V ID=3.1A 1.8 17 5 2 VGS=4.5V10 1.6 1.4 1.2 ID=2A 1 0.8 6 8 0 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 240 1.0E+01 ID=3.1A 220 1.0E+00 40 200 1.0E-01 180 IS (A) RDS(ON) (mΩ ) 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 160 2 125°C 160 140 125°C 1.0E-02 1.0E-03 120 25°C 25°C 1.0E-04 100 1.0E-05 80 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4442 75V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 500 10 VDS=37.5V ID=3.1A 400 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 300 200 Coss 100 0 Crss 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 6 0 10 20 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 60 10000 100.0 TA=25°C 10µs 1000 100µs 1.0 RDS(ON) limited 0.1 Power (W) ID (Amps) 10.0 1ms 10ms TJ(Max)=150°C TA=25°C 100 10 10s DC 0.0 1 0.01 0.1 1 10 VDS (Volts) 100 1000 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/5 www.freescale.net.cn AO4442 75V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig 5/5 Isd L + VD C - IF t rr dI/dt I RM V dd V dd V ds www.freescale.net.cn