AO4421 60V P-Channel MOSFET General Description The AO4421 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. Features VDS -60V -6.2A ID (at VGS=-10V) RDS(ON) (at VGS=-10V) < 40mΩ RDS(ON) (at VGS = -4.5V) < 50mΩ SO8 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A Pulsed Drain Current TA=70°C B Junction and Storage Temperature Range Maximum Junction-to-Lead 1/4 C ±20 V ID -5 IDM -40 W 2 -55 to 150 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State A 3.1 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V -6.2 TA=25°C Power Dissipation A Maximum -60 RθJA RθJL Typ 24 54 21 °C Max 40 75 30 Units °C/W °C/W °C/W www.freescale.net.cn AO4421 60V P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min ID=-250µA, VGS=0V -60 -1 -5 VDS=0V, VGS=±20V ±100 Gate Threshold Voltage VDS=VGS ID=-250µA -1 On state drain current VGS=-10V, VDS=-5V -40 VGS=-10V, ID=-6.2A 70 VGS=-4.5V, ID=-5A 40 50 mΩ VDS=-5V, ID=-6.2A 18 -1 V -4.2 A 2900 pF Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance V A 53 gFS Rg -3 nA 40 Static Drain-Source On-Resistance Reverse Transfer Capacitance -2 µA 32 RDS(ON) Output Capacitance Units V TJ=55°C ID(ON) Crss Max VDS=-48V, VGS=0V VGS(th) Coss Typ S -0.74 2417 VGS=0V, VDS=-30V, f=1MHz 179 pF 120 VGS=0V, VDS=0V, f=1MHz mΩ pF Ω 1.9 2.3 SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) 46.5 55 Qg(4.5V) Total Gate Charge (4.5V) 22.7 nC 9.1 nC VGS=-10V, VDS=-30V, ID=-6.2A nC Qgs Gate Source Charge Qgd Gate Drain Charge 9.2 nC tD(on) Turn-On DelayTime 9.8 ns tr Turn-On Rise Time 6.1 ns VGS=-10V, VDS=-30V, RL=4.7Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 44 ns 12.7 ns trr Body Diode Reverse Recovery Time IF=-6.2A, dI/dt=100A/µs 34 Qrr Body Diode Reverse Recovery Charge IF=-6.2A, dI/dt=100A/µs 47 42 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. 2/4 www.freescale.net.cn AO4421 60V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 25 -10V -4V -4.5V 20 -5V -3.5V -6V 20 15 -ID(A) -ID (A) VDS=-5V 25 15 10 10 125°C VGS=-3V 5 5 25°C 0 0 0 1 2 3 4 5 1 1.5 45 40 35 VGS=-10V Normalized On-Resistance RDS(ON) (mΩ ) 2.5 3 3.5 4 2.00 VGS=-4.5V VGS=-10V ID=-6.2A 1.80 1.60 VGS=-4.5V ID=-5A 1.40 1.20 1.00 0.80 30 0 0 5 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 100 90 ID=-6.2A 1.0E+00 125°C 80 1.0E-01 70 125°C 60 -IS (A) RDS(ON) (mΩ ) 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 1.0E-02 1.0E-03 50 1.0E-04 25°C 40 1.0E-05 25°C 30 1.0E-06 20 2 3/4 3 4 5 -VGS 6 (Volts) 7 8 9 10 Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO4421 60V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 3500 10 VDS=-30V ID=-6.2A 3000 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 2500 2000 1500 1000 2 Coss Crss 500 0 0 0 10 20 30 40 50 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 40 50 60 100 1000 TJ(Max)=150°C TA=25°C RDS(ON) limited 100µs 1ms 0.1s 10µs 30 Power (W) -ID (Amps) 30 40 TJ(Max)=150°C, T A=25°C 1.0 20 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 10 10ms 1s 20 10 10s DC 0 0.1 0.1 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 4/4 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000 www.freescale.net.cn