AON5802B Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AON5802B/L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configuration. AON5802B and AON5802BL are electrically identical. -RoHs Compliant -AON5802BL is Halogen Free Features VDS (V) = 30V ID = 7.2A (VGS = 4.5V) RDS(ON) < 19 mΩ (VGS = 4.5V) RDS(ON) < 20 mΩ (VGS = 4.0V) RDS(ON) < 23 mΩ (VGS = 3.1V) RDS(ON) < 30 mΩ (VGS = 2.5V) DFN 2X5 S2 S1 G1 D1 1 S2 D2 1 G2 S1 Rg D1/D2 Rg G2 G1 S1 S2 G2 Top View G1 S2 S1 S2 S1 Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±12 TA=25°C Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C 1.6 W 1.0 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 55 PDSM TA=70°C V 5.6 IDM TA=25°C Units 7.2 ID TA=70°C Junction and Storage Temperature Range 1/5 Maximum RθJA RθJL Typ 30 61 4.5 °C Max 40 75 6 Units °C/W °C/W °C/W www.freescale.net.cn AON5802B Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS=±10V Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 0.6 ID(ON) On state drain current VGS=4.5V, VDS=5V 55 10 VGS=4.5V, ID=7A 15.5 19 23.5 29 VGS=4.0V, ID=5A 13 16 20 VGS=3.1V, ID=5A VGS=2.5V, ID=4A 14 18 23 17 23 30 Forward Transconductance VDS=5V, ID=7A 32 VSD Diode Forward Voltage IS=1A,VGS=0V 0.71 IS Maximum Body-Diode Continuous Current Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA V A gFS Coss 1.5 12 DYNAMIC PARAMETERS Ciss Input Capacitance µA V 1.1 19 TJ=125°C Units V 1 IGSS Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V BVGSO RDS(ON) Typ 920 VGS=0V, VDS=15V, f=1MHz 105 VGS=0V, VDS=0V, f=1MHz 1.7 mΩ S 0.9 V 2.5 A 1150 pF pF 52 pF 2.5 kΩ SWITCHING PARAMETERS Qg(10V) Total Gate Charge 17.5 24 nC Qg(4.5V) Total Gate Charge 7.5 10 nC Qgs Gate Source Charge Qgd Gate Drain Charge 2.5 tD(on) Turn-On DelayTime 320 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/µs Body Diode Reverse Recovery Time VGS=10V, VDS=15V, ID=7A 2.9 nC nC 420 ns VGS=10V, VDS=15V, RL=2.1Ω, RGEN=3Ω 550 ns 4.35 µs IF=7A, dI/dt=100A/µs 21.6 µs 2.4 10 26 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the steady state thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev5: July2011 2/5 AON5802B Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 4.5V 50 VDS=5V 3.5V 3V 25 40 ID(A) ID (A) 20 30 2.5V 20 15 10 VGS=2V 10 125°C 5 25°C 0 0 0 1 2 3 4 0.5 5 1 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 40 Normalized On-Resistance 1.8 VGS=2.5V 30 RDS(ON) (mΩ ) 1.5 20 VGS=4.5V 10 VGS=4.5V ID=7A 1.6 1.4 VGS=2.5V ID=4A 1.2 1.0 0 0 5 10 15 20 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+02 ID=7A 125°C 1.0E+01 50 1.0E+00 125°C 30 IS (A) RDS(ON) (mΩ ) 40 1.0E-01 25°C 1.0E-02 1.0E-03 20 25°C 10 1.0E-04 1.0E-05 0.0 0 0 3/5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD (Volts) Figure 6: Body-Diode Characteristics 1.6 AON5802B Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 VDS=15V ID=7A 8 Capacitance (pF) VGS (Volts) 1200 6 4 800 400 2 Crss 0 Coss 0 0 4 8 12 16 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 5 10 V (Volts) 15 20 25 DS Figure 8: Capacitance Characteristics 30 200 100.0 160 100µs 1.0 1ms 10ms 0.1s 1s 10s RDS(ON) limited 0.1 DC TJ(Max)=150°C TA=25°C 0.0 0.01 0.1 Power (W) 10µs 10.0 ID (Amps) Ciss TJ(Max)=150°C TA=25°C 120 80 40 1 VDS (Volts) 10 100 0 1E-04 0.001 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note E) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJA.RθJA RθJA=75°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse 0.01 0.00001 0.0001 0.001 0.01 Ton 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4/5 T 10 100 1000 AON5802B Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg Vgs 10% Vgs td(on) tr td(off) ton tf toff Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 5/5 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds