KEXIN 2SC4617

Transistors
SMD Type
General purpose transistor
2SC4617
SOT-523
Unit: mm
+0.1
1.6-0.1
+0.1
1.0-0.1
+0.05
0.2-0.05
Features
+0.01
0.1-0.01
2
0.55
Low Cob : Cob=2.0pF (Typ.)
1
+0.15
1.6-0.15
+0.05
0.8-0.05
NPN silicon transistor
0.35
3
+0.25
0.3-0.05
0.5
+0.1
-0.1
+0.1
0.8-0.1
+0.05
0.75-0.05
1. Base
2. Emitter
3. Collecter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
0.15
A
Collector power dissipation
PC
0.15
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
IC=50ìA
60
V
Collector-emitter breakdown voltage
VCEO
IC=1mA
50
V
7
Emitter-base breakdown voltage
VEBO
IE=50ìA
Collector cutoff current
ICBO
VCB=60V
0.1
A
Emitter cutoff current
IEBO
VEB=7V
0.1
A
hFE
VCE=6V, IC=1mA
DC current gain
V
120
560
VCE(sat) IC/IB=50mA/5mA
Collector-emitter saturation voltage
Output capacitance
Cob
Transition frequency
fT
VCE=12V, IE=0A, f=1MHz
VCE=12V, IE=-2mA, f=100MHz
2
180
0.4
V
3.5
pF
MHz
hFE Classification
Marking
BQ
BR
BS
Rank
Q
R
S
hFE
120
270
180
390
270
560
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Transistors
SMD Type
2SC4617
Typlcal Characteristics
Fig.1 Grounded Emitter Propagation
Characteristics
Fig.4 DC Current Gain vs.
Collector Current
Fig.7 Collector Emitter Saturation
Voltage vs. Collector Current
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Fig.2 Grounded Emitter Output
Characteristics
Fig.5 DC Current Gain vs.
Collector Current
Fig.8 Collector Emitter Saturation
Voltage vs. Collector Current
Fig.3 Grounded Emitter Output
Characteristics
Fig. 6 Collector Emitter Saturation
Voltage vs. Collector Current
Fig.9 Gain Bandwidth Product vs.
Emitter Current
Transistors
SMD Type
2SC4617
Fig.11 Base-Collector Time Constant
Fig.10 Collector Output Capacitance vs.
vs. Emitter Current
Collector-Base Voltage
Emitter Input Capacitance vs.
Emitter-Base Voltage
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