Product specification 2SA2071 ■ Features ● High speed switching. (Tf : Typ. : 20ns at IC = - 3A) ● Low saturation voltage, typically (Typ. : -2 00mV at IC = -2A, IB = -0.2A) ● Strong discharge power for inductive load and capacitance load. ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 Emitter - Base Voltage V EBO -6 IC -3 IC P -6 Collector Current Collector Power Dissipation PC 0.5 Junction Temperature TJ 150 Storage Temperature range Ts tg Unit V A W ℃ -55 to 150 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Testconditons Min Typ Max Collecto- base breakdown voltage V CBO Ic= -100 µA ， IE =0 -60 Collector- emitter breakdown voltage V CEO Ic= -1 mA， IB=0 -60 Emitter - base breakdown voltage V EBO IE = -100μA ， I C=0 -6 Collector-base cut-off current ICBO V CB= -40 V , IE=0 -1.0 Emitter cut-off current I EBO V EB = -4V , IC=0 -1.0 DC current gain h FE V CE= -2V, IC= -100mA Collector-emitter saturation voltage Collector output capacitance Transition frequency http://www.twtysemi.com VCE(sat) IC=-2A, IB =-200mA Cob fT Unit V 120 uA 390 -0.2 -0.5 V V CB= -10V, IE =0mA, f=1MHz 50 PF V CE= 180 MHz -10V, [email protected] IE = 10mA,f=10MHz 4008-318-123 1 of 3 Product specification 2SA2071 Typical Characteristics 1000 SWITCHING TIME : (ns) −1 −0.1 100us 1ms 10ms 100ms DC −0.01 −0.001 −0.1 −1 −10 DC CURRENT GAIN : hFE Tf Ton 100 −0.1 −1 −10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) Fig.1 Safe Operating Area Fig.2 Switching Time 1000 −10 Ta=25°C VCE= −5V VCE= −3V VCE= −2V 100 10 1 −0.001 −0.01 −0.1 −1 −10 IC/IB=10/1 −1 Ta=125°C Ta=25°C Ta= −40°C −0.1 −0.01 −0.001 COLLECTOR CURRENT : IC (A) 1000 −10 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 100 Ta=125°C Ta=25°C Ta= −40°C 10 −0.01 −0.1 −1 −10 COLLECTOR CURRENT : IC (A) Fig.3 DC Current Gain vs. Collector Current (Ι) http://www.twtysemi.com −0.1 −1 −10 Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) VCE= −2V 1 −0.001 −0.01 COLLECTOR CURRENT : IC (A) Fig.4 DC Current Gain vs. Collector Current (ΙΙ) DC CURRENT GAIN : hFE Ta=25°C VCC= −25V IC/IB=10/1 Tstg 10 −0.01 −100 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR CURRENT : IC (A) −10 [email protected] Ta=25°C −1 IC/IB=20/1 IC/IB=10/1 −0.1 −0.01 −0.001 −0.01 −0.1 −1 −10 COLLECTOR CURRENT : IC (A) Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) 4008-318-123 2 of 3 Product specification 2SA2071 Typical Characteristics IC/IB=10/1 −1 Ta= −40°C −0.1 Ta=25°C Ta=125°C −0.01 −0.001 −0.01 −0.1 −1 −10 −10 COLLECTOR CURRENT : IC (A) BASE EMITTER SATURATION VOLTAGE : VBE (sat) (V) −10 Ta=125°C Ta=25°C −1 Ta= −40°C −0.1 −0.01 10 −1 −10 −100 TRANSITION FREQUENCY : fT (MHz) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=25°C f=1MHz 100 1 −0.1 −0.5 −1 −1.5 Fig.8 Grounded Emitter Propagation Characteristics Fig.7 Base-Emitter Saturation Voltage vs. Collecter Current - 0 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) 1000 VCE= −2V 1000 Ta=25°C VCE= −10V 100 10 1 0.001 0.01 0.1 1 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER CURRENT : IE (A) Fig.10 Collector Output Capacitance Fig.9 Transition Frequency http://www.twtysemi.com [email protected] 10 4008-318-123 3 of 3