Transistors IC SMD Type Product specification 2SD2211 SOT- 89 ■ Features Unit:mm 1.50 ±0.1 4.50±0.1 ● High breakdown voltage. 1.80±0.1 2.50±0.1 4.00±0.1 ● Low collector output capacitance. ● High transition frequency . 0.44±0.1 0.40±0.1 0.53±0.1 2.60±0.1 0.48±0.1 0.80±0.1 3 2 1 3.00±0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector to Base Voltage V CBO 160 V Collector to Emitter Voltage V CEO 160 V Emitter to Base Voltage VEBO 5 V Collector Current to -Continuous 1.5 IC -Pulse (Note 1) A 3.0 Collector Dissipation -Continuous 0.5 Pc - Pulse (Note 2) W 2.0 Junction Temperature TJ Storage Temperature Tstg 150 ℃ -55 to 150 ℃ Notes: 1. Pw=200ms , duty=1/2 2. When mounted on a 40 x 40 x 0.7mm ceramic board. ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V CBO Ic=50uA ,I E=0 160 V Collector-emitter breakdown voltage V CEO IC= 1 mA , IB =0 160 V Emitter-base breakdown voltage VEBO IE= 50 uA ,IC=0 5 V Collector cut-off current I CBO VCB =120 V , IE=0 Emitter cut-off current IEBO VEB=4V , I C=0 DC current gain hFE VCE = 5V, IC= 100mA Collector-emitter saturation voltage V CE(sat) IC=1A, IB = 0.1A * Base-emitter saturation voltage V BE(sat) IC=1A, IB = 0.1A * 120 1 uA 1 uA 390 2.0 1.5 V V Output capacitance Cob VCB = 10V , IE = 0A , f = 1MHz 20 pF Transition frequency fT VCE = 5 V, IE = -0.1A,f = 30MHz 80 MHz * Measured using pulse current. ■ hFE Classification Marking DQ DR hFE 120～ 270 180～390 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification 2SD2211 ■ Typical Characteristics 0mA COLLECTOR CURRENT : IC (A) 1 COLLECTOR CURRENT : IC (A) 1000 10 Ta=25°C 9mA 8mA 7mA 6mA 0.8 0.6 5mA 4mA 0.4 3mA 2mA 0.2 IB=1mA 500 5 2 1 Ta=100°C 0.5 Ta=25°C Ta= −25°C 0.2 0.1 0.05 200 0 1 2 3 4 0.01 5 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 5 1 0.01 1.8 100 25°C −25°C 20 10 5 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 Ta=25°C 5 2 1 0.5 0.2 IC/IB=20 0.1 0.05 0.02 0.02 −500 −1000 EMITTER CURRENT : IE (mA) http://www.twtysemi.com 10 0.1 −25°C 0.02 VCE(sat) 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 Ta=25°C f=1MHz IE=0A 500 5 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 Fig.8 Collector output capacitance vs. collector-base voltage [email protected] 5 10 Fig.6 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage 10 1000 2 COLLECTOR CURRENT : IC (A) 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Gain bandwidth products vs. emitter current 100°C Ic Max (Pulse∗) 2 1 500m 200m 100m 50m Ta=25°C ∗Single nonrepetitive pulse s∗ m −100 −200 25°C s∗ 2 −50 VBE(sat) 0.2 0m =1 5 Ta= −25°C 1 0.5 C 10 −20 5 10 D 20 −10 2 5 2 Pw 50 −5 1 2 IC/IB=10 00 =1 100 −2 0.5 1 5 Pw TRANSITION FREQUENCY : fT (MHz) Ta=25°C VCE=5V 200 1 −1 0.2 Fig.5 Collector-emitter saturation voltage vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Fig.4 DC current gain vs. collector current ( ΙΙ ) 500 0.1 0.5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 1000 0.05 0.2 0.05 10 0.01 0.01 0.1 Fig.3 DC current gain vs. collector current ( Ι ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) Ta=100°C 200 10 0.05 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=5V 50 0.02 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics 500 5V 20 2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 1000 VCE=10V 100 0.02 0 Ta=25°C VCE=5V DC CURRENT GAIN : hFE 1.0 20m 10m 5m 2m 1m Recommended land 0.1 0.2 0.5 2 5 10 20 50 100 200 500 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Safe operating area (2SD2211) 4008-318-123 2 of 2