TYSEMI 2SB962-Z

Product specification
2SB962-Z
TO-252
6.50
+0.2
5.30-0.2
Features
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
Low VCE(sat): VCE(sat)=-0.3V.
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector to base voltage
Parameter
VCBO
-40
V
Collector to emitter voltage
VCEO
-30
V
Emitter to base voltage
VEBO
-5
V
Collector current
IC
-3
A
Collector current pulse *
ICP
-6
A
Total power dissipation
PT
2
W
Junction temperature
Tj
150
Tstg
-55 to +150
Storage temperature range
* PW
10ms,duty cycle 50%.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cutoff current
ICBO
VCB = -30 V, IE = 0
Emitter cutoff current
IEBO
VEB = -3.0 V, IC = 0
DC current gain *
hFE
Min
Typ
VCE = -2.0 V, IC = -1A
60
160
VCE = -2.0 V, IC =-20mA
30
150
Max
Unit
-10
µA
-1
µA
400
Collector saturation voltage *
VCE(sat) IC = -2A, IB = -0.2A
-0.3
-0.5
V
Base saturation voltage *
VBE(sat) IC = -2A, IB = -0.2A
-1
-2
V
Gain bandwidth product
fT
Output capacitance
* Pulsed: PW
Cob
350 µs, duty cycle
VCE = -5.0 V, IE = 100mA
80
MHz
VCB = -10 V, IE = 0 , f = 1.0 MHz
55
pF
2%
hFE Classification
Rank
R
Q
P
E
hFE
60 120
100 200
160 320
200 400
http://www.twtysemi.com
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4008-318-123
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