TYSEMI 2SB800

Product specification
2SB800
Features
World standard miniature package:SOT-89
High collector to emitter voltage:VCEO
-80V
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
-80
V
Collector to emitter voltage
VCEO
-80
V
Emitter to base voltage
VEBO
-5
V
Collector current
IC
-300
mA
Collector current(Pulse) *
IC
-500
mA
Total power dissipation
PT
2.0
W
Junction temperature
Tj
150
Tstg
-55 to +150
Storage temperature range
* PW
10ms,duty cycle 50%.
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = -80 V, IE = 0
Testconditons
-100
nA
Emitter cutoff current
IEBO
VEB = -5.0 V, IC = 0
-100
nA
DC current gain *
hFE
90
200
VCE = -2.0 V, IC = -300 mA
30
80
VCE(sat) IC = -300mA, IB = -30mA
Base saturation voltage *
VBE(sat) IC = -300mA, IB = -30mA
Gain bandwidth product
Output capacitance
* Pulsed: PW
-0.3
400
-0.6
V
-0.9
-1.2
V
-660
-700
mV
VBE
VCE = -6.0 V, IC = -10 mA
fT
VCE = -6.0 V, IE = 10 mA
100
MHz
VCB = -6.0 V, IE = 0 , f = 1.0 MHz
13
pF
Cob
350 ìs, duty cycle
Typ
VCE = -1.0 V, IC = -50 mA
Collector saturation voltage *
Base-emitter voltage *
Min
-600
2%
hFE Classification
Marking
FM
FL
FK
hFE
90 180
135 270
200 400
http://www.twtysemi.com
[email protected]
4008-318-123
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