TYSEMI 2SB736

Product specification
2SB736
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
Complementary to 2SD780.
0.55
Micro package.
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
High DC Current Gain: hFE = 200 TYP. (VCE = -1.0 V, IC = -50 mA)
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
-60
V
Collector to emitter voltage
VCEO
-60
V
Emitter to base voltage
VEBO
-5.0
V
Collector current (DC)
IC
-300
mA
Total power dissipation
PT
200
mW
Junction temperature
Storage temperature range
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = -50 V, IE = 0
-100
nA
Emitter cutoff current
IEBO
VEB = -5.0 V, IC = 0
-100
nA
DC current gain *
hFE
VCE = -1.0 V, IC = -50 mA
110
Base to emitter voltage *
VBE
VCE = 6.0 V, IC = -10 mA
-600
Collector saturation voltage *
Output capacitance
Cob
350 µs, duty cycle
Min
VCE(sat) IC = -300 mA, IB = -30 mA
Gain bandwidth product
* Pulsed: PW
Testconditons
fT
Typ
400
-660
-700
mV
-0.35
-0.6
V
VCB = -6.0 V, IE = 0 , f = 1.0 MHz
13
pF
VCE = -6.0 V, IE = 10 mA
100
MHz
2%
hFE Classification
Marking
BW1
BW2
BW3
BW4
BW5
hFE
110 180
135 220
170 270
200 320
250 400
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4008-318-123
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