Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SD1618 Features Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 5 V Collector current IC 0.7 A Collector current (pulse) ICP 1.5 A PC 500 mW W Collector dissipation PC * 1.3 Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 * Mounted on ceramic board (250mm2X0.8mm) www.kexin.com.cn 1 Transistors SMD Type 2SD1618 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = 15V , IE = 0 0.1 ìA Emitter cutoff current IEBO VCB = 4V , IE = 0 0.1 ìA DC current Gain hFE Gain bandwidth product fT Collector-emitter saturation voltage VCE = 2V , IC = 50mA 140 VCE = 2V , IC = 500mA 60 Typ 560 250 MHz IC = 5mA , IB = 0.5mA 10 25 mV IC = 100mA , IB = 10mA 30 80 mV VBE(sat) IC = 100mA , IB = 10mA 0.8 1.2 V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 20 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 15 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 5 V Output capacitance Cob VCB = 10V , f = 1MHz hFE Classification DA Marking 2 Min VCE = 10V , IC = 50mA VCE(sat) Base-emitter saturation voltage Testconditons Rank S T U hFE 140 280 200 400 280 560 www.kexin.com.cn 8 pF